Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers

J. Koida, S. F. Chichibu, A. Uedono, Takayuki Sota, A. Tsukazaki, M. Kawasaki

    Research output: Contribution to journalArticle

    49 Citations (Scopus)

    Abstract

    The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.

    Original languageEnglish
    Pages (from-to)1079-1081
    Number of pages3
    JournalApplied Physics Letters
    Volume84
    Issue number7
    DOIs
    Publication statusPublished - 2004 Feb 16

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    optoelectronic devices
    positrons
    molecular beam epitaxy
    laser beams
    reflectance
    photoluminescence
    electric fields
    defects
    polarization

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers. / Koida, J.; Chichibu, S. F.; Uedono, A.; Sota, Takayuki; Tsukazaki, A.; Kawasaki, M.

    In: Applied Physics Letters, Vol. 84, No. 7, 16.02.2004, p. 1079-1081.

    Research output: Contribution to journalArticle

    Koida, J. ; Chichibu, S. F. ; Uedono, A. ; Sota, Takayuki ; Tsukazaki, A. ; Kawasaki, M. / Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers. In: Applied Physics Letters. 2004 ; Vol. 84, No. 7. pp. 1079-1081.
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    AU - Uedono, A.

    AU - Sota, Takayuki

    AU - Tsukazaki, A.

    AU - Kawasaki, M.

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