Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers

J. Koida, S. F. Chichibu, A. Uedono, T. Sota, A. Tsukazaki, M. Kawasaki

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Abstract

The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.

Original languageEnglish
Pages (from-to)1079-1081
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
Publication statusPublished - 2004 Feb 16

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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