Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

Takeyoshi Onuma, Shigefusa F. Chlchibu, Akira Uedono, Takayuki Sota, Pablo Cantu, Thomas M. Katona, John F. Keading, Stacia Keller, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars

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Abstract

The study of both the radiative and nonradiative processes in nearly strain-free AlxGa1-xN alloy was presented. The investigations were conducted via the time-resolved photoluminescence (TRPL) and the positron annihilation techniques. The TRPL study found a biexponential decay at low temperature and, with the increase in the value of x, a simultaneous increase in the size of cation vacancies over that of the near-band-edge one was seen at 300 K. As the dominance of nonradiative and recombination processes in the free states came into play, with the increase in the value of x and the temperature, the TRPL signal became single exponential.

Original languageEnglish
Pages (from-to)2495-2504
Number of pages10
JournalJournal of Applied Physics
Volume95
Issue number5
DOIs
Publication statusPublished - 2004 Mar 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Onuma, T., Chlchibu, S. F., Uedono, A., Sota, T., Cantu, P., Katona, T. M., Keading, J. F., Keller, S., Mishra, U. K., Nakamura, S., & DenBaars, S. P. (2004). Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques. Journal of Applied Physics, 95(5), 2495-2504. https://doi.org/10.1063/1.1644041