Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

Takeyoshi Onuma, Shigefusa F. Chlchibu*, Akira Uedono, Takayuki Sota, Pablo Cantu, Thomas M. Katona, John F. Keading, Stacia Keller, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

91 Citations (Scopus)

Abstract

The study of both the radiative and nonradiative processes in nearly strain-free AlxGa1-xN alloy was presented. The investigations were conducted via the time-resolved photoluminescence (TRPL) and the positron annihilation techniques. The TRPL study found a biexponential decay at low temperature and, with the increase in the value of x, a simultaneous increase in the size of cation vacancies over that of the near-band-edge one was seen at 300 K. As the dominance of nonradiative and recombination processes in the free states came into play, with the increase in the value of x and the temperature, the TRPL signal became single exponential.

Original languageEnglish
Pages (from-to)2495-2504
Number of pages10
JournalJournal of Applied Physics
Volume95
Issue number5
DOIs
Publication statusPublished - 2004 Mar 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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