Radiative recombination in CdTe/MnTe quantum wells: Emission from near infrared to blue wavelengths

Q. Fu, N. Pelekanos, Arto V. Nurmikko, S. Durbin, J. Han, Masakazu Kobayashi, R. L. Gunshor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of strained single-quantum-well (SQW) CdTe/MnTe structures with well thicknesses ranging from approximately 50 to 10 angstrom were studied. Raman experiments indicate that the lattice mismatch of approximately 3.2% is coherently accommodated if the MnTe barrier layers remain sufficiently thin (typically approximately 40 angstrom). As an example of the effects of the strong quantum confinement in these heterostructures, photoluminescence spectra (normalized amplitudes) obtained from three CdTe quantum-well samples with well thickness of approximately 22, 15, and 10 angstrom, respectively, are shown. The emissions occur in the red, yellow, and blue for the n = 1 exciton recombination in the structures. The blue emission (at approximately 478 nm) shows how confinement effects are responsible for increasing the optical gap of CdTe by approximately 1 eV. Steady-state and transient spectroscopy were applied to the quantum wells to detail the confined electronic states. An approximate conduction-to-valence band offset ratio of approximately 10:1 and excitonic binding energies in the range of 20-25 meV were inferred. Temperature-dependent linewidth studies gave a measure of the exciton-optical phonon coupling strengths that was a factor of approximately 5-8 larger than values reported for the GaAs quantum wells.

Original languageEnglish
Title of host publicationXVII International Conference on Quantum Electronics. Digest of
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages60-61
Number of pages2
Publication statusPublished - 1990
Externally publishedYes
Event17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
Duration: 1990 May 211990 May 25

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period90/5/2190/5/25

Fingerprint

Semiconductor quantum wells
Infrared radiation
Wavelength
Excitons
Lattice mismatch
Quantum confinement
Electronic states
Valence bands
Binding energy
Linewidth
Heterojunctions
Photoluminescence
Spectroscopy
Experiments
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fu, Q., Pelekanos, N., Nurmikko, A. V., Durbin, S., Han, J., Kobayashi, M., & Gunshor, R. L. (1990). Radiative recombination in CdTe/MnTe quantum wells: Emission from near infrared to blue wavelengths. In XVII International Conference on Quantum Electronics. Digest of (pp. 60-61). Piscataway, NJ, United States: Publ by IEEE.

Radiative recombination in CdTe/MnTe quantum wells : Emission from near infrared to blue wavelengths. / Fu, Q.; Pelekanos, N.; Nurmikko, Arto V.; Durbin, S.; Han, J.; Kobayashi, Masakazu; Gunshor, R. L.

XVII International Conference on Quantum Electronics. Digest of. Piscataway, NJ, United States : Publ by IEEE, 1990. p. 60-61.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fu, Q, Pelekanos, N, Nurmikko, AV, Durbin, S, Han, J, Kobayashi, M & Gunshor, RL 1990, Radiative recombination in CdTe/MnTe quantum wells: Emission from near infrared to blue wavelengths. in XVII International Conference on Quantum Electronics. Digest of. Publ by IEEE, Piscataway, NJ, United States, pp. 60-61, 17th International Conference on Quantum Electronics - IQEC '90, Anaheim, CA, USA, 90/5/21.
Fu Q, Pelekanos N, Nurmikko AV, Durbin S, Han J, Kobayashi M et al. Radiative recombination in CdTe/MnTe quantum wells: Emission from near infrared to blue wavelengths. In XVII International Conference on Quantum Electronics. Digest of. Piscataway, NJ, United States: Publ by IEEE. 1990. p. 60-61
Fu, Q. ; Pelekanos, N. ; Nurmikko, Arto V. ; Durbin, S. ; Han, J. ; Kobayashi, Masakazu ; Gunshor, R. L. / Radiative recombination in CdTe/MnTe quantum wells : Emission from near infrared to blue wavelengths. XVII International Conference on Quantum Electronics. Digest of. Piscataway, NJ, United States : Publ by IEEE, 1990. pp. 60-61
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N2 - A series of strained single-quantum-well (SQW) CdTe/MnTe structures with well thicknesses ranging from approximately 50 to 10 angstrom were studied. Raman experiments indicate that the lattice mismatch of approximately 3.2% is coherently accommodated if the MnTe barrier layers remain sufficiently thin (typically approximately 40 angstrom). As an example of the effects of the strong quantum confinement in these heterostructures, photoluminescence spectra (normalized amplitudes) obtained from three CdTe quantum-well samples with well thickness of approximately 22, 15, and 10 angstrom, respectively, are shown. The emissions occur in the red, yellow, and blue for the n = 1 exciton recombination in the structures. The blue emission (at approximately 478 nm) shows how confinement effects are responsible for increasing the optical gap of CdTe by approximately 1 eV. Steady-state and transient spectroscopy were applied to the quantum wells to detail the confined electronic states. An approximate conduction-to-valence band offset ratio of approximately 10:1 and excitonic binding energies in the range of 20-25 meV were inferred. Temperature-dependent linewidth studies gave a measure of the exciton-optical phonon coupling strengths that was a factor of approximately 5-8 larger than values reported for the GaAs quantum wells.

AB - A series of strained single-quantum-well (SQW) CdTe/MnTe structures with well thicknesses ranging from approximately 50 to 10 angstrom were studied. Raman experiments indicate that the lattice mismatch of approximately 3.2% is coherently accommodated if the MnTe barrier layers remain sufficiently thin (typically approximately 40 angstrom). As an example of the effects of the strong quantum confinement in these heterostructures, photoluminescence spectra (normalized amplitudes) obtained from three CdTe quantum-well samples with well thickness of approximately 22, 15, and 10 angstrom, respectively, are shown. The emissions occur in the red, yellow, and blue for the n = 1 exciton recombination in the structures. The blue emission (at approximately 478 nm) shows how confinement effects are responsible for increasing the optical gap of CdTe by approximately 1 eV. Steady-state and transient spectroscopy were applied to the quantum wells to detail the confined electronic states. An approximate conduction-to-valence band offset ratio of approximately 10:1 and excitonic binding energies in the range of 20-25 meV were inferred. Temperature-dependent linewidth studies gave a measure of the exciton-optical phonon coupling strengths that was a factor of approximately 5-8 larger than values reported for the GaAs quantum wells.

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