Radical polymer-based thin film device and its I-V characteristics

Yasunori Yonekuta, Takashi Kurata, Shigemoto Abe, Hiroyuki Nishide

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

Original languageEnglish
Title of host publicationPolymer Preprints, Japan
Pages1694
Number of pages1
Volume54
Edition1
Publication statusPublished - 2005
Event54th SPSJ Annual Meeting 2005 - Yokohama
Duration: 2005 May 252005 May 27

Other

Other54th SPSJ Annual Meeting 2005
CityYokohama
Period05/5/2505/5/27

Keywords

  • I-V Characteristics
  • Memory Device
  • Radical Polymer
  • Redox
  • Thin Film

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Yonekuta, Y., Kurata, T., Abe, S., & Nishide, H. (2005). Radical polymer-based thin film device and its I-V characteristics. In Polymer Preprints, Japan (1 ed., Vol. 54, pp. 1694)