Raman and infrared spectroscopy of organic electronic devices

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We present Raman and infrared studies on the structures of organic semiconductor thin films used for electronic devices. The Raman spectra of crystalline and amorphous states of an organic semiconductor, N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), were measured. These states give rise to slightly different peak positions and widths of each Raman band. Raman images were observed for polycrystalline pentacene films evaporated on a silicon substrate. The structural defects were found in the images of the intensity ratio I 1596/I1533, which reflects the orientation of molecules i.e., crystalline domains. Photoinduced infrared absorption from the composite of regioregular poly(3-dodecylthiphene) and C60 was measured by the difference FT-IR method. The observed absorption is attributable to photogenerated carriers. The action spectra of photoinduced infrared absorption are explained by electron transfer from photogenerated excited states on a polymer chain to C60.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    Volume7993
    DOIs
    Publication statusPublished - 2011
    EventICONO 2010: International Conference on Coherent and Nonlinear Optics - Kazan
    Duration: 2010 Aug 232010 Aug 26

    Other

    OtherICONO 2010: International Conference on Coherent and Nonlinear Optics
    CityKazan
    Period10/8/2310/8/26

    Fingerprint

    Semiconducting organic compounds
    Infrared Spectroscopy
    Raman Spectroscopy
    Infrared absorption
    organic semiconductors
    Raman
    Organic Semiconductors
    infrared absorption
    Raman spectroscopy
    Infrared spectroscopy
    Infrared
    Absorption
    infrared spectroscopy
    Electronics
    Crystalline materials
    Diamines
    Silicon
    diamines
    electronics
    Action Spectrum

    Keywords

    • Infrared
    • Organic light-emitting diode
    • Organic solar cell
    • Organic thin-film transistor
    • Raman

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Furukawa, Y. (2011). Raman and infrared spectroscopy of organic electronic devices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7993). [799320] https://doi.org/10.1117/12.880237

    Raman and infrared spectroscopy of organic electronic devices. / Furukawa, Yukio.

    Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7993 2011. 799320.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Furukawa, Y 2011, Raman and infrared spectroscopy of organic electronic devices. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7993, 799320, ICONO 2010: International Conference on Coherent and Nonlinear Optics, Kazan, 10/8/23. https://doi.org/10.1117/12.880237
    Furukawa Y. Raman and infrared spectroscopy of organic electronic devices. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7993. 2011. 799320 https://doi.org/10.1117/12.880237
    Furukawa, Yukio. / Raman and infrared spectroscopy of organic electronic devices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7993 2011.
    @inproceedings{e24f745693fe4438bb74105a3d13e851,
    title = "Raman and infrared spectroscopy of organic electronic devices",
    abstract = "We present Raman and infrared studies on the structures of organic semiconductor thin films used for electronic devices. The Raman spectra of crystalline and amorphous states of an organic semiconductor, N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), were measured. These states give rise to slightly different peak positions and widths of each Raman band. Raman images were observed for polycrystalline pentacene films evaporated on a silicon substrate. The structural defects were found in the images of the intensity ratio I 1596/I1533, which reflects the orientation of molecules i.e., crystalline domains. Photoinduced infrared absorption from the composite of regioregular poly(3-dodecylthiphene) and C60 was measured by the difference FT-IR method. The observed absorption is attributable to photogenerated carriers. The action spectra of photoinduced infrared absorption are explained by electron transfer from photogenerated excited states on a polymer chain to C60.",
    keywords = "Infrared, Organic light-emitting diode, Organic solar cell, Organic thin-film transistor, Raman",
    author = "Yukio Furukawa",
    year = "2011",
    doi = "10.1117/12.880237",
    language = "English",
    isbn = "9780819485663",
    volume = "7993",
    booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

    }

    TY - GEN

    T1 - Raman and infrared spectroscopy of organic electronic devices

    AU - Furukawa, Yukio

    PY - 2011

    Y1 - 2011

    N2 - We present Raman and infrared studies on the structures of organic semiconductor thin films used for electronic devices. The Raman spectra of crystalline and amorphous states of an organic semiconductor, N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), were measured. These states give rise to slightly different peak positions and widths of each Raman band. Raman images were observed for polycrystalline pentacene films evaporated on a silicon substrate. The structural defects were found in the images of the intensity ratio I 1596/I1533, which reflects the orientation of molecules i.e., crystalline domains. Photoinduced infrared absorption from the composite of regioregular poly(3-dodecylthiphene) and C60 was measured by the difference FT-IR method. The observed absorption is attributable to photogenerated carriers. The action spectra of photoinduced infrared absorption are explained by electron transfer from photogenerated excited states on a polymer chain to C60.

    AB - We present Raman and infrared studies on the structures of organic semiconductor thin films used for electronic devices. The Raman spectra of crystalline and amorphous states of an organic semiconductor, N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), were measured. These states give rise to slightly different peak positions and widths of each Raman band. Raman images were observed for polycrystalline pentacene films evaporated on a silicon substrate. The structural defects were found in the images of the intensity ratio I 1596/I1533, which reflects the orientation of molecules i.e., crystalline domains. Photoinduced infrared absorption from the composite of regioregular poly(3-dodecylthiphene) and C60 was measured by the difference FT-IR method. The observed absorption is attributable to photogenerated carriers. The action spectra of photoinduced infrared absorption are explained by electron transfer from photogenerated excited states on a polymer chain to C60.

    KW - Infrared

    KW - Organic light-emitting diode

    KW - Organic solar cell

    KW - Organic thin-film transistor

    KW - Raman

    UR - http://www.scopus.com/inward/record.url?scp=79951632107&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=79951632107&partnerID=8YFLogxK

    U2 - 10.1117/12.880237

    DO - 10.1117/12.880237

    M3 - Conference contribution

    AN - SCOPUS:79951632107

    SN - 9780819485663

    VL - 7993

    BT - Proceedings of SPIE - The International Society for Optical Engineering

    ER -