Raman characterization and electrical properties of poly(3-hexylthiophene) doped electrochemically in an ionic liquid-gated transistor geometry

Jun Yamamoto, Yukio Furukawa

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    Using Raman spectroscopy, we observed carriers, polarons and bipolarons formed in an ionic-liquid-gated P3HT electrochemical transistor with an ionic liquid [BMIM][TFSI] as a gate dielectric. The relationships between the source-drain current (ID), the gate voltage (VG) at a constant source-drain voltage (VD), and injected charges at each VG were investigated. An increase in ID is attributed to the formation of positive polarons, whereas a decrease in ID corresponded to positive bipolarons. Thus, positive polarons are efficient carriers in P3HT electrochemical transistors. Charge densities, doping levels, electrical conductivities, and mobilities of polarons in P3HT were calculated from the electrochemical measurements. Only positive polarons exist below the dopant level x = 27 mol%, whereas at higher doping levels, polarons and bipolarons coexist. The mobility of polarons was dependent on the doping level. The highest mobility was 0.31 cm2 V-1 s-1 at x = 15 mol%.

    Original languageEnglish
    Pages (from-to)82-87
    Number of pages6
    JournalOrganic Electronics: physics, materials, applications
    Volume28
    DOIs
    Publication statusPublished - 2016 Jan 1

    Fingerprint

    Ionic Liquids
    Polarons
    polarons
    Ionic liquids
    Transistors
    Electric properties
    transistors
    electrical properties
    Geometry
    liquids
    geometry
    Doping (additives)
    Electric potential
    electric potential
    Gate dielectrics
    Drain current
    poly(3-hexylthiophene)
    Charge density
    Raman spectroscopy
    electrical resistivity

    Keywords

    • Bipolaron
    • Ionic liquid
    • Organic transistor
    • Polaron
    • poly(3-hexylthiophene)
    • Raman

    ASJC Scopus subject areas

    • Biomaterials
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Electrical and Electronic Engineering
    • Chemistry(all)
    • Condensed Matter Physics

    Cite this

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    abstract = "Using Raman spectroscopy, we observed carriers, polarons and bipolarons formed in an ionic-liquid-gated P3HT electrochemical transistor with an ionic liquid [BMIM][TFSI] as a gate dielectric. The relationships between the source-drain current (ID), the gate voltage (VG) at a constant source-drain voltage (VD), and injected charges at each VG were investigated. An increase in ID is attributed to the formation of positive polarons, whereas a decrease in ID corresponded to positive bipolarons. Thus, positive polarons are efficient carriers in P3HT electrochemical transistors. Charge densities, doping levels, electrical conductivities, and mobilities of polarons in P3HT were calculated from the electrochemical measurements. Only positive polarons exist below the dopant level x = 27 mol{\%}, whereas at higher doping levels, polarons and bipolarons coexist. The mobility of polarons was dependent on the doping level. The highest mobility was 0.31 cm2 V-1 s-1 at x = 15 mol{\%}.",
    keywords = "Bipolaron, Ionic liquid, Organic transistor, Polaron, poly(3-hexylthiophene), Raman",
    author = "Jun Yamamoto and Yukio Furukawa",
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    TY - JOUR

    T1 - Raman characterization and electrical properties of poly(3-hexylthiophene) doped electrochemically in an ionic liquid-gated transistor geometry

    AU - Yamamoto, Jun

    AU - Furukawa, Yukio

    PY - 2016/1/1

    Y1 - 2016/1/1

    N2 - Using Raman spectroscopy, we observed carriers, polarons and bipolarons formed in an ionic-liquid-gated P3HT electrochemical transistor with an ionic liquid [BMIM][TFSI] as a gate dielectric. The relationships between the source-drain current (ID), the gate voltage (VG) at a constant source-drain voltage (VD), and injected charges at each VG were investigated. An increase in ID is attributed to the formation of positive polarons, whereas a decrease in ID corresponded to positive bipolarons. Thus, positive polarons are efficient carriers in P3HT electrochemical transistors. Charge densities, doping levels, electrical conductivities, and mobilities of polarons in P3HT were calculated from the electrochemical measurements. Only positive polarons exist below the dopant level x = 27 mol%, whereas at higher doping levels, polarons and bipolarons coexist. The mobility of polarons was dependent on the doping level. The highest mobility was 0.31 cm2 V-1 s-1 at x = 15 mol%.

    AB - Using Raman spectroscopy, we observed carriers, polarons and bipolarons formed in an ionic-liquid-gated P3HT electrochemical transistor with an ionic liquid [BMIM][TFSI] as a gate dielectric. The relationships between the source-drain current (ID), the gate voltage (VG) at a constant source-drain voltage (VD), and injected charges at each VG were investigated. An increase in ID is attributed to the formation of positive polarons, whereas a decrease in ID corresponded to positive bipolarons. Thus, positive polarons are efficient carriers in P3HT electrochemical transistors. Charge densities, doping levels, electrical conductivities, and mobilities of polarons in P3HT were calculated from the electrochemical measurements. Only positive polarons exist below the dopant level x = 27 mol%, whereas at higher doping levels, polarons and bipolarons coexist. The mobility of polarons was dependent on the doping level. The highest mobility was 0.31 cm2 V-1 s-1 at x = 15 mol%.

    KW - Bipolaron

    KW - Ionic liquid

    KW - Organic transistor

    KW - Polaron

    KW - poly(3-hexylthiophene)

    KW - Raman

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