Raman imaging of carrier distribution in the channel of an ionic liquid-gated transistor fabricated with regioregular poly(3-hexylthiophene)

Y. Wada, I. Enokida, J. Yamamoto, Y. Furukawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Raman images of carriers (positive polarons) at the channel of an ionic liquid-gated transistor (ILGT) fabricated with regioregular poly(3-hexylthiophene) (P3HT) have been measured with excitation at 785 nm. The observed spectra indicate that carriers generated are positive polarons. The intensities of the 1415 cm−1 band attributed to polarons in the P3HT channel were plotted as Raman images; they showed the carrier density distribution. When the source–drain voltage VD is lower than the source–gate voltage VG (linear region), the carrier density was uniform. When VD is nearly equal to VG (saturation region), a negative carrier density gradient from the source electrode towards the drain electrode was observed. This carrier density distribution is associated with the observed current–voltage characteristics, which is not consistent with the “pinch-off” theory of inorganic semiconductor transistors.

Original languageEnglish
Pages (from-to)166-169
Number of pages4
JournalSpectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy
Volume197
DOIs
Publication statusPublished - 2018 May 15

Keywords

  • Carrier
  • Chemical imaging
  • Ionic liquid
  • Organic transistor
  • Poly(3-hexylthiophene)
  • Raman imaging

ASJC Scopus subject areas

  • Analytical Chemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Spectroscopy

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