Raman imaging of carrier distribution in the channel of an ionic liquid-gated transistor fabricated with regioregular poly(3-hexylthiophene)

Y. Wada, I. Enokida, J. Yamamoto, Yukio Furukawa

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Raman images of carriers (positive polarons) at the channel of an ionic liquid-gated transistor (ILGT) fabricated with regioregular poly(3-hexylthiophene) (P3HT) have been measured with excitation at 785 nm. The observed spectra indicate that carriers generated are positive polarons. The intensities of the 1415 cm−1 band attributed to polarons in the P3HT channel were plotted as Raman images; they showed the carrier density distribution. When the source–drain voltage VD is lower than the source–gate voltage VG (linear region), the carrier density was uniform. When VD is nearly equal to VG (saturation region), a negative carrier density gradient from the source electrode towards the drain electrode was observed. This carrier density distribution is associated with the observed current–voltage characteristics, which is not consistent with the “pinch-off” theory of inorganic semiconductor transistors.

    Original languageEnglish
    Pages (from-to)166-169
    Number of pages4
    JournalSpectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy
    Volume197
    DOIs
    Publication statusPublished - 2018 May 15

    Fingerprint

    Ionic Liquids
    Ionic liquids
    Polarons
    Carrier concentration
    Transistors
    polarons
    transistors
    Imaging techniques
    liquids
    density distribution
    Electrodes
    electrodes
    Electric potential
    electric potential
    Semiconductor materials
    saturation
    gradients
    poly(3-hexylthiophene)
    excitation

    Keywords

    • Carrier
    • Chemical imaging
    • Ionic liquid
    • Organic transistor
    • Poly(3-hexylthiophene)
    • Raman imaging

    ASJC Scopus subject areas

    • Analytical Chemistry
    • Atomic and Molecular Physics, and Optics
    • Instrumentation
    • Spectroscopy

    Cite this

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    title = "Raman imaging of carrier distribution in the channel of an ionic liquid-gated transistor fabricated with regioregular poly(3-hexylthiophene)",
    abstract = "Raman images of carriers (positive polarons) at the channel of an ionic liquid-gated transistor (ILGT) fabricated with regioregular poly(3-hexylthiophene) (P3HT) have been measured with excitation at 785 nm. The observed spectra indicate that carriers generated are positive polarons. The intensities of the 1415 cm−1 band attributed to polarons in the P3HT channel were plotted as Raman images; they showed the carrier density distribution. When the source–drain voltage VD is lower than the source–gate voltage VG (linear region), the carrier density was uniform. When VD is nearly equal to VG (saturation region), a negative carrier density gradient from the source electrode towards the drain electrode was observed. This carrier density distribution is associated with the observed current–voltage characteristics, which is not consistent with the “pinch-off” theory of inorganic semiconductor transistors.",
    keywords = "Carrier, Chemical imaging, Ionic liquid, Organic transistor, Poly(3-hexylthiophene), Raman imaging",
    author = "Y. Wada and I. Enokida and J. Yamamoto and Yukio Furukawa",
    year = "2018",
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    doi = "10.1016/j.saa.2018.01.043",
    language = "English",
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    journal = "Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy",
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    TY - JOUR

    T1 - Raman imaging of carrier distribution in the channel of an ionic liquid-gated transistor fabricated with regioregular poly(3-hexylthiophene)

    AU - Wada, Y.

    AU - Enokida, I.

    AU - Yamamoto, J.

    AU - Furukawa, Yukio

    PY - 2018/5/15

    Y1 - 2018/5/15

    N2 - Raman images of carriers (positive polarons) at the channel of an ionic liquid-gated transistor (ILGT) fabricated with regioregular poly(3-hexylthiophene) (P3HT) have been measured with excitation at 785 nm. The observed spectra indicate that carriers generated are positive polarons. The intensities of the 1415 cm−1 band attributed to polarons in the P3HT channel were plotted as Raman images; they showed the carrier density distribution. When the source–drain voltage VD is lower than the source–gate voltage VG (linear region), the carrier density was uniform. When VD is nearly equal to VG (saturation region), a negative carrier density gradient from the source electrode towards the drain electrode was observed. This carrier density distribution is associated with the observed current–voltage characteristics, which is not consistent with the “pinch-off” theory of inorganic semiconductor transistors.

    AB - Raman images of carriers (positive polarons) at the channel of an ionic liquid-gated transistor (ILGT) fabricated with regioregular poly(3-hexylthiophene) (P3HT) have been measured with excitation at 785 nm. The observed spectra indicate that carriers generated are positive polarons. The intensities of the 1415 cm−1 band attributed to polarons in the P3HT channel were plotted as Raman images; they showed the carrier density distribution. When the source–drain voltage VD is lower than the source–gate voltage VG (linear region), the carrier density was uniform. When VD is nearly equal to VG (saturation region), a negative carrier density gradient from the source electrode towards the drain electrode was observed. This carrier density distribution is associated with the observed current–voltage characteristics, which is not consistent with the “pinch-off” theory of inorganic semiconductor transistors.

    KW - Carrier

    KW - Chemical imaging

    KW - Ionic liquid

    KW - Organic transistor

    KW - Poly(3-hexylthiophene)

    KW - Raman imaging

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    JO - Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy

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