Raman microscopy and scanning surface potential microscopy analysis of nanoscale defects on si wafer surfaces

Takayuki Homma, Masahiro Kato, Nobuhiro Kubo, Kaoruho Sakata, Masahiro Yanagisawa

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Nanometer-scale defects on the surface of a Si wafer, fabricated by nanoindentation technique, were examined using Raman microscopy and scanning surface potential microscopy to determine the quantitative relation between surface potential shift and Raman shift. Formation of cracks has not observed at the defect sites, indicating that the plastic and elastic deformations were a major issue and that the residual stress from the plastic deformation was observed. The Raman peak of the array of defects formed by nanoindentation shifted to a lower wavenumber as the indentation force was increased. The results indicated that the amount of tensile strain increased with the indentation force, that is, tensile stress was dominant over the condition in the surrounded area, in the indentation-induced defects. Correspondingly, the surface potential of the defect arrays shifted to the negative direction with an increase in indentation force. These results suggest that the tensile stress at the defect site, indicated by the Raman shift, causes the negative shift in the surface potential, which is related to chemical reactivity. Furthermore, Raman shift of a single indent on a silicon-on-insulator (SOI) wafer was observed, which revealed an enhancement in the source-to-noise ratio of the Raman spectrum at the Si defect site, because the ratio of the volume of the defect site to that of the unstrained site increased due to the thin Si layer on the SOI wafer.

    Original languageEnglish
    JournalJournal of the Electrochemical Society
    Volume156
    Issue number6
    DOIs
    Publication statusPublished - 2009

    Fingerprint

    Surface potential
    Microscopic examination
    wafers
    microscopy
    Scanning
    Defects
    scanning
    defects
    indentation
    Indentation
    shift
    Silicon
    Nanoindentation
    nanoindentation
    tensile stress
    Tensile stress
    plastic deformation
    Plastic deformation
    insulators
    Chemical reactivity

    ASJC Scopus subject areas

    • Electrochemistry
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Renewable Energy, Sustainability and the Environment
    • Condensed Matter Physics

    Cite this

    Raman microscopy and scanning surface potential microscopy analysis of nanoscale defects on si wafer surfaces. / Homma, Takayuki; Kato, Masahiro; Kubo, Nobuhiro; Sakata, Kaoruho; Yanagisawa, Masahiro.

    In: Journal of the Electrochemical Society, Vol. 156, No. 6, 2009.

    Research output: Contribution to journalArticle

    Homma, Takayuki ; Kato, Masahiro ; Kubo, Nobuhiro ; Sakata, Kaoruho ; Yanagisawa, Masahiro. / Raman microscopy and scanning surface potential microscopy analysis of nanoscale defects on si wafer surfaces. In: Journal of the Electrochemical Society. 2009 ; Vol. 156, No. 6.
    @article{11958ef3489044c3a9ce3d28f4be4bc0,
    title = "Raman microscopy and scanning surface potential microscopy analysis of nanoscale defects on si wafer surfaces",
    abstract = "Nanometer-scale defects on the surface of a Si wafer, fabricated by nanoindentation technique, were examined using Raman microscopy and scanning surface potential microscopy to determine the quantitative relation between surface potential shift and Raman shift. Formation of cracks has not observed at the defect sites, indicating that the plastic and elastic deformations were a major issue and that the residual stress from the plastic deformation was observed. The Raman peak of the array of defects formed by nanoindentation shifted to a lower wavenumber as the indentation force was increased. The results indicated that the amount of tensile strain increased with the indentation force, that is, tensile stress was dominant over the condition in the surrounded area, in the indentation-induced defects. Correspondingly, the surface potential of the defect arrays shifted to the negative direction with an increase in indentation force. These results suggest that the tensile stress at the defect site, indicated by the Raman shift, causes the negative shift in the surface potential, which is related to chemical reactivity. Furthermore, Raman shift of a single indent on a silicon-on-insulator (SOI) wafer was observed, which revealed an enhancement in the source-to-noise ratio of the Raman spectrum at the Si defect site, because the ratio of the volume of the defect site to that of the unstrained site increased due to the thin Si layer on the SOI wafer.",
    author = "Takayuki Homma and Masahiro Kato and Nobuhiro Kubo and Kaoruho Sakata and Masahiro Yanagisawa",
    year = "2009",
    doi = "10.1149/1.3106085",
    language = "English",
    volume = "156",
    journal = "Journal of the Electrochemical Society",
    issn = "0013-4651",
    publisher = "Electrochemical Society, Inc.",
    number = "6",

    }

    TY - JOUR

    T1 - Raman microscopy and scanning surface potential microscopy analysis of nanoscale defects on si wafer surfaces

    AU - Homma, Takayuki

    AU - Kato, Masahiro

    AU - Kubo, Nobuhiro

    AU - Sakata, Kaoruho

    AU - Yanagisawa, Masahiro

    PY - 2009

    Y1 - 2009

    N2 - Nanometer-scale defects on the surface of a Si wafer, fabricated by nanoindentation technique, were examined using Raman microscopy and scanning surface potential microscopy to determine the quantitative relation between surface potential shift and Raman shift. Formation of cracks has not observed at the defect sites, indicating that the plastic and elastic deformations were a major issue and that the residual stress from the plastic deformation was observed. The Raman peak of the array of defects formed by nanoindentation shifted to a lower wavenumber as the indentation force was increased. The results indicated that the amount of tensile strain increased with the indentation force, that is, tensile stress was dominant over the condition in the surrounded area, in the indentation-induced defects. Correspondingly, the surface potential of the defect arrays shifted to the negative direction with an increase in indentation force. These results suggest that the tensile stress at the defect site, indicated by the Raman shift, causes the negative shift in the surface potential, which is related to chemical reactivity. Furthermore, Raman shift of a single indent on a silicon-on-insulator (SOI) wafer was observed, which revealed an enhancement in the source-to-noise ratio of the Raman spectrum at the Si defect site, because the ratio of the volume of the defect site to that of the unstrained site increased due to the thin Si layer on the SOI wafer.

    AB - Nanometer-scale defects on the surface of a Si wafer, fabricated by nanoindentation technique, were examined using Raman microscopy and scanning surface potential microscopy to determine the quantitative relation between surface potential shift and Raman shift. Formation of cracks has not observed at the defect sites, indicating that the plastic and elastic deformations were a major issue and that the residual stress from the plastic deformation was observed. The Raman peak of the array of defects formed by nanoindentation shifted to a lower wavenumber as the indentation force was increased. The results indicated that the amount of tensile strain increased with the indentation force, that is, tensile stress was dominant over the condition in the surrounded area, in the indentation-induced defects. Correspondingly, the surface potential of the defect arrays shifted to the negative direction with an increase in indentation force. These results suggest that the tensile stress at the defect site, indicated by the Raman shift, causes the negative shift in the surface potential, which is related to chemical reactivity. Furthermore, Raman shift of a single indent on a silicon-on-insulator (SOI) wafer was observed, which revealed an enhancement in the source-to-noise ratio of the Raman spectrum at the Si defect site, because the ratio of the volume of the defect site to that of the unstrained site increased due to the thin Si layer on the SOI wafer.

    UR - http://www.scopus.com/inward/record.url?scp=65449190101&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=65449190101&partnerID=8YFLogxK

    U2 - 10.1149/1.3106085

    DO - 10.1149/1.3106085

    M3 - Article

    AN - SCOPUS:65449190101

    VL - 156

    JO - Journal of the Electrochemical Society

    JF - Journal of the Electrochemical Society

    SN - 0013-4651

    IS - 6

    ER -