Raman spectra of polyacetylene doped with electron acceptor

Y. Uchida*, Y. Furukawa, M. Tasumi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The Raman spectra of a polyacetylene film doped heavily with SO3 have been measured with excitation wavelengths between 488.0 and 1064 nm. Observed Raman bands are attributed to positively charged domains generated by SO3 doping. Doping-induced changes in the Raman spectra are summarized as follows. (1) The ν1 and ν3 bands observed in the region of 1575-1485 and 1147-1112 cm-1, respectively, upshift upon doping. (2) The ν1 and ν3 bands become broad upon doping. (3) Small but significant upshifts of the ν2 band in the region of 1301-1294 cm-1 are observed upon p-type doping in contrast to downshifts for n-type doping.

Original languageEnglish
Pages (from-to)55-56
Number of pages2
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 1995 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Raman spectra of polyacetylene doped with electron acceptor'. Together they form a unique fingerprint.

Cite this