Raman spectroscopic study on boron-doped silicon nanoparticles

Miho Momose, Masao Hirasaka, Yukio Furukawa

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm -1. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37%, 35%, and 28%, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (IAS/IS) observed near 520 cm -1. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm2 was 298 C, whereas the temperature of the P-doped Si nanoparticle film was 92 C. The B-doped Si nanoparticle films were capable of producing light-induced heat.

    Original languageEnglish
    Pages (from-to)62-65
    Number of pages4
    JournalVibrational Spectroscopy
    Volume72
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Boron
    Silicon
    Nanoparticles
    Crystalline materials
    Grain boundaries
    Doping (additives)
    Spin coating
    Temperature
    Electron microscopes
    Irradiation
    Thin films

    Keywords

    • B-doped Si
    • Nanoparticle
    • Raman
    • Silicon
    • Temperature

    ASJC Scopus subject areas

    • Spectroscopy

    Cite this

    Raman spectroscopic study on boron-doped silicon nanoparticles. / Momose, Miho; Hirasaka, Masao; Furukawa, Yukio.

    In: Vibrational Spectroscopy, Vol. 72, 2014, p. 62-65.

    Research output: Contribution to journalArticle

    @article{a5b859119d964dbfb8fda7811edb3e7b,
    title = "Raman spectroscopic study on boron-doped silicon nanoparticles",
    abstract = "Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm -1. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37{\%}, 35{\%}, and 28{\%}, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (IAS/IS) observed near 520 cm -1. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm2 was 298 C, whereas the temperature of the P-doped Si nanoparticle film was 92 C. The B-doped Si nanoparticle films were capable of producing light-induced heat.",
    keywords = "B-doped Si, Nanoparticle, Raman, Silicon, Temperature",
    author = "Miho Momose and Masao Hirasaka and Yukio Furukawa",
    year = "2014",
    doi = "10.1016/j.vibspec.2014.02.014",
    language = "English",
    volume = "72",
    pages = "62--65",
    journal = "Vibrational Spectroscopy",
    issn = "0924-2031",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Raman spectroscopic study on boron-doped silicon nanoparticles

    AU - Momose, Miho

    AU - Hirasaka, Masao

    AU - Furukawa, Yukio

    PY - 2014

    Y1 - 2014

    N2 - Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm -1. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37%, 35%, and 28%, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (IAS/IS) observed near 520 cm -1. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm2 was 298 C, whereas the temperature of the P-doped Si nanoparticle film was 92 C. The B-doped Si nanoparticle films were capable of producing light-induced heat.

    AB - Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm -1. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37%, 35%, and 28%, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (IAS/IS) observed near 520 cm -1. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm2 was 298 C, whereas the temperature of the P-doped Si nanoparticle film was 92 C. The B-doped Si nanoparticle films were capable of producing light-induced heat.

    KW - B-doped Si

    KW - Nanoparticle

    KW - Raman

    KW - Silicon

    KW - Temperature

    UR - http://www.scopus.com/inward/record.url?scp=84896464942&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84896464942&partnerID=8YFLogxK

    U2 - 10.1016/j.vibspec.2014.02.014

    DO - 10.1016/j.vibspec.2014.02.014

    M3 - Article

    AN - SCOPUS:84896464942

    VL - 72

    SP - 62

    EP - 65

    JO - Vibrational Spectroscopy

    JF - Vibrational Spectroscopy

    SN - 0924-2031

    ER -