Raman spectroscopic study on boron-doped silicon nanoparticles

Miho Momose, Masao Hirasaka, Yukio Furukawa

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm -1. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37%, 35%, and 28%, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (IAS/IS) observed near 520 cm -1. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm2 was 298 C, whereas the temperature of the P-doped Si nanoparticle film was 92 C. The B-doped Si nanoparticle films were capable of producing light-induced heat.

    Original languageEnglish
    Pages (from-to)62-65
    Number of pages4
    JournalVibrational Spectroscopy
    Volume72
    DOIs
    Publication statusPublished - 2014

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    Keywords

    • B-doped Si
    • Nanoparticle
    • Raman
    • Silicon
    • Temperature

    ASJC Scopus subject areas

    • Spectroscopy

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