Raman study of the metal-insulator transition in pyroclilore Mo oxides

K. Taniguchi, Takuro Katsufuji, S. Iguchi, Y. Taguchi, H. Takagi, Y. Tokura

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    Raman scattering spectra have been investigated for the correlated 4d-electron system, R2Mo2O7 (Tf=Nd, Sm, Gd, Tb,Dy,Nd1-xDyx), which undergoes a metal-insulator transition with changing the rare-earth ion R, or equivalently the one-electron bandwidth. It is found that several phonon peaks modulating the Mo-O-Mo bond angle appear in the metallic phase (R=Nd, Sm, Gd, Nd1-xJDy x), whereas they are remarkably suppressed in intensity in the insulating phase (R=Tb,Dy). This result indicates that the phonon modes of R2Mo2O7 are coupled with the electron-hole excitation across the Fermi level, thus probing sensitively the low-energy charge dynamics in the vicinity of the bandwidth-control Mott transition.

    Original languageEnglish
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume70
    Issue number10
    DOIs
    Publication statusPublished - 2004 Sep

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    Metal insulator transition
    Oxides
    insulators
    bandwidth
    oxides
    Electrons
    metals
    Bandwidth
    electrons
    rare earth elements
    Raman spectra
    Fermi level
    Rare earths
    Raman scattering
    Ions
    excitation
    ions
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Raman study of the metal-insulator transition in pyroclilore Mo oxides. / Taniguchi, K.; Katsufuji, Takuro; Iguchi, S.; Taguchi, Y.; Takagi, H.; Tokura, Y.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 10, 09.2004.

    Research output: Contribution to journalArticle

    Taniguchi, K. ; Katsufuji, Takuro ; Iguchi, S. ; Taguchi, Y. ; Takagi, H. ; Tokura, Y. / Raman study of the metal-insulator transition in pyroclilore Mo oxides. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 70, No. 10.
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