Raman temperature measurements of copper phthalocyanine layer of organic light-emitting diode using bandwidth-temperature relationship

Ryota Iwasaki, Masaki Hirose, Yukio Furukawa

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1 Citation (Scopus)

Abstract

We have estimated the temperature of a buried copper phthalocyanine (CuPc) layer in an organic light-emitting diode with the glass/indium-tinoxide (ITO)/CuPc/N,N0-di-1-naphthaleyl-N,N0-diphenyl-1,10-biphenyl-4,40-diamine (NPD)/tris(8-quinolinolato)aluminum(III) (Alq3)/LiF-Al structure from the full width at half-maximum (FWHM) of a Raman band at around 1528 cm-1. The FWHMs of the band were measured at temperatures in the range from 25 to 200 C. A linear equation was obtained from the observed data by the least-squares method. We estimated the temperature of the CuPc layer in an operating organic light-emitting diode at current densities from 100 to 1000 mA/cm2 using this relationship. The highest temperature was 148 4 -C at a current density of 1000 mA/cm2.

Original languageEnglish
Article number05DC16
JournalJapanese journal of applied physics
Volume52
Issue number5 PART 2
DOIs
Publication statusPublished - 2013 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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