Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition

Hiroshi Komiyama, Toshio Ohsawa

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35 Citations (Scopus)

Abstract

A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl3 and NH3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.

Original languageEnglish
Pages (from-to)L795-L797
JournalJapanese Journal of Applied Physics
Volume24
Issue number10
DOIs
Publication statusPublished - 1985
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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