Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition

Hiroshi Komiyama, Toshio Ohsawa

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl3 and NH3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.

Original languageEnglish
Pages (from-to)L795-L797
JournalJapanese Journal of Applied Physics
Volume24
Issue number10
DOIs
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

particle precipitation
Chemical vapor deposition
vapor deposition
Substrates
Gases
gases
Atmospheric pressure
Quartz
atmospheric pressure
quartz
Glass
glass

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Rapid growth of AlN films by particle-precipitation aided chemical vapor deposition. / Komiyama, Hiroshi; Ohsawa, Toshio.

In: Japanese Journal of Applied Physics, Vol. 24, No. 10, 1985, p. L795-L797.

Research output: Contribution to journalArticle

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