Rapid oxidation of SiC using highly concentrated ozone and characterization of oxide films

Hidehiko Nonaka, Shingo Ichimura, Ryoji Kosugi, Kenji Fukuda, Kazuo Arai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The highly concentrated (almost 100 vol.%) ozone gas has been utilized to dry oxidation of SiC single crystal substrates by using a quartz furnace with local heating by a halogen heater. When the flow velocity of ozone was kept as high as 5 m·cm-1 or more, the strong oxidizing power of ozone enabled rapid oxidation of SiC at a considerably lower temperature than that for the oxidation in oxygen. The ozone oxidation also resulted in a lower interface state density in the device charactrization for the MOS structure probably because the ozone oxidation was effective in reducing carbon-related defects.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalJournal of the Vacuum Society of Japan
Volume51
Issue number3
DOIs
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces
  • Spectroscopy

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