Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

Tetsuya Nishiguchi, Shigeru Saitoh, Naoto Kameda, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

Original languageEnglish
Pages (from-to)2835-2839
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number5 A
DOIs
Publication statusPublished - 2007 May 8
Externally publishedYes

Fingerprint

Ultraviolet radiation
Ozone
ozone
low pressure
Irradiation
Silicon
Oxidation
oxidation
irradiation
silicon
Gases
gases
Voltage measurement
Electric current measurement
electrical measurement
Capacitance
Electron microscopes
Photons
electron microscopes
capacitance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C. / Nishiguchi, Tetsuya; Saitoh, Shigeru; Kameda, Naoto; Morikawa, Yoshiki; Kekura, Mitsuru; Nonaka, Hidehiko; Ichimura, Shingo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 5 A, 08.05.2007, p. 2835-2839.

Research output: Contribution to journalArticle

Nishiguchi, Tetsuya ; Saitoh, Shigeru ; Kameda, Naoto ; Morikawa, Yoshiki ; Kekura, Mitsuru ; Nonaka, Hidehiko ; Ichimura, Shingo. / Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 5 A. pp. 2835-2839.
@article{3d552807297a4b38a55d4b0449fee0c1,
title = "Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C",
abstract = "A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.",
author = "Tetsuya Nishiguchi and Shigeru Saitoh and Naoto Kameda and Yoshiki Morikawa and Mitsuru Kekura and Hidehiko Nonaka and Shingo Ichimura",
year = "2007",
month = "5",
day = "8",
doi = "10.1143/JJAP.46.2835",
language = "English",
volume = "46",
pages = "2835--2839",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 A",

}

TY - JOUR

T1 - Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

AU - Nishiguchi, Tetsuya

AU - Saitoh, Shigeru

AU - Kameda, Naoto

AU - Morikawa, Yoshiki

AU - Kekura, Mitsuru

AU - Nonaka, Hidehiko

AU - Ichimura, Shingo

PY - 2007/5/8

Y1 - 2007/5/8

N2 - A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

AB - A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

UR - http://www.scopus.com/inward/record.url?scp=34547902871&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547902871&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.2835

DO - 10.1143/JJAP.46.2835

M3 - Article

AN - SCOPUS:34547902871

VL - 46

SP - 2835

EP - 2839

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 A

ER -