A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 2007 May 8|
ASJC Scopus subject areas
- Physics and Astronomy(all)