Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

Tetsuya Nishiguchi, Shigeru Saitoh, Naoto Kameda, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

Original languageEnglish
Pages (from-to)2835-2839
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number5 A
DOIs
Publication statusPublished - 2007 May 8
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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