Rapid vapour deposition and

In situ melt crystallization for 1 min fabrication of 10 μm-thick crystalline silicon films with a lateral grain size of over 100 μm

Y. Yamasaki, K. Hasegawa, Toshio Ohsawa, Suguru Noda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We developed a film deposition method which yielded continuous polycrystalline Si films with large lateral grain sizes of over 100 μm and thicknesses of ∼10 μm in 1 min on growth substrates other than silicon wafers in a single-step process. The silicon source is heated to ∼2000 °C, much higher than the melting point of Si, which enables a high deposition rate. Controlling the temperature of the growth substrate, initially above and later below the melting point of Si, allows the seamless lateral to vertical growth of crystalline silicon grains. Thermally and chemically stable substrates of quartz glass and alumina with a 0.1 μm-thick amorphous carbon layer were effective; liquid silicon wetted well by forming a thin SiC interlayer while substrates stayed stable. Such large-grain polycrystalline silicon films synthesized rapidly in 1 min may be used for low-cost, stable and flexible thin film photovoltaic cells.

Original languageEnglish
Pages (from-to)3404-3410
Number of pages7
JournalCrystEngComm
Volume18
Issue number19
DOIs
Publication statusPublished - 2016

Fingerprint

Vapor deposition
Silicon
Crystallization
silicon films
grain size
vapor deposition
crystallization
Crystalline materials
Fabrication
fabrication
silicon
Substrates
melting points
Melting point
Quartz
Aluminum Oxide
Photovoltaic cells
photovoltaic cells
Amorphous carbon
Deposition rates

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "We developed a film deposition method which yielded continuous polycrystalline Si films with large lateral grain sizes of over 100 μm and thicknesses of ∼10 μm in 1 min on growth substrates other than silicon wafers in a single-step process. The silicon source is heated to ∼2000 °C, much higher than the melting point of Si, which enables a high deposition rate. Controlling the temperature of the growth substrate, initially above and later below the melting point of Si, allows the seamless lateral to vertical growth of crystalline silicon grains. Thermally and chemically stable substrates of quartz glass and alumina with a 0.1 μm-thick amorphous carbon layer were effective; liquid silicon wetted well by forming a thin SiC interlayer while substrates stayed stable. Such large-grain polycrystalline silicon films synthesized rapidly in 1 min may be used for low-cost, stable and flexible thin film photovoltaic cells.",
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T2 - In situ melt crystallization for 1 min fabrication of 10 μm-thick crystalline silicon films with a lateral grain size of over 100 μm

AU - Yamasaki, Y.

AU - Hasegawa, K.

AU - Ohsawa, Toshio

AU - Noda, Suguru

PY - 2016

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