Rashba effect of bismuth thin film on silicon studied by spin-resolved ARPES

A. Takayama*, T. Sato, S. Souma, T. Takahashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We report high-resolution spin- and angle-resolved photoemission spectroscopy of bismuth thin film on Si(1 1 1) to discuss the spin structure of surface states. We found that, unlike conventional picture of the Rashba splitting, the magnitude of the in-plane spin polarization is asymmetric between two hole pockets across the Brillouin-zone center. In addition, these pockets exhibit a giant out-of-plane spin polarization as large as the in-plane counterpart, which changes the sign across the Γ¯.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume201
DOIs
Publication statusPublished - 2015 May 1
Externally publishedYes

Keywords

  • Bismuth
  • Rashba effect
  • Spin-orbit coupling
  • Spin-resolved ARPES
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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