Rashba spin–orbit interaction for holes confined in quasi-two dimensional silicon quantum well system I: Modification of spin textures

Tatsuki Tojo, Kyozaburo Takeda

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2 Citations (Scopus)

Abstract

We revisit the Rashba spin–orbit interaction (SOI) for holes confined in the silicon two-dimensional quantum well (Si 2D QW) system and explore the modulation in the spin textures as well as the electronic structures. We extend the k · p perturbation approach, including possible perturbation terms crossing with the SOI couplings up to the second-order terms. Focusing on the crystal as well as the particle=atomic momenta, we explore the distribution and orientation of the effective magnetic field (EMF) caused by the SOI couplings and investigate how the EMFs change the spin textures of heavy-mass holes (HHs), light-mass holes (LHs), and separate holes (SHs). The three-fold degeneracy and finite angular momentum of j‘j ¼ 1 at the valence-band edge states cause complicated SOI couplings due to the inter-subband interaction. Consequently, holes generate the characteristic spin textures, completely different from those found in conduction electrons.

Original languageEnglish
Article number094711
Journaljournal of the physical society of japan
Volume88
Issue number9
DOIs
Publication statusPublished - 2019 Jan 1

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textures
quantum wells
silicon
interactions
perturbation
conduction electrons
angular momentum
electronic structure
valence
momentum
modulation
causes
magnetic fields
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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