Ratio of transverse diffusion coefficient to mobility of electrons in high-pressure xenon

Shingo Kobayashi, Nobuyuki Hasebe, Tsutomu Igarashi, Takashi Miyachi, Mitsuhiro Miyajima, Hiroyuki Okada, Tadayoshi Doke, Eido Shibamura, Valery V. Dmitrenko, Konstantin F. Vlasik

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    We constructed a parallel plate drift chamber for measuring the ratio of the transverse diffusion coefficient Dt to the mobility μ of electrons multiplied by the elementary charge e, eDt/μ, which is called the transverse characteristic energy, in high-pressure xenon gas. The characteristic energies of electrons in Xe were obtained at a high pressure of 1.0MPa and the reduced electric field, E/N, from 0.77 to 7.7 × 10 -18 V·Cm2, where E denotes an electric field and N the number density of Xe atoms. At the same E/N, our results agreed well with the data at pressures from 107 to 193 kPa previously obtained by Koizumi et al. [J. Phys. B 19 (1986) 2331]. The characteristic energies of electrons in Xe were found to be constant as a function of E/N from a low pressure to 1.0MPa.

    Original languageEnglish
    Pages (from-to)5568-5572
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume43
    Issue number8 A
    DOIs
    Publication statusPublished - 2004 Aug 1

    Fingerprint

    Xenon
    xenon
    diffusion coefficient
    Electrons
    electrons
    electric fields
    Electric fields
    Drift chambers
    parallel plates
    energy
    low pressure
    chambers
    gases
    Atoms
    atoms
    Gases

    Keywords

    • Characteristic energy of electrons
    • H
    • High-pressure xenon gas
    • Time projection chamber
    • Transverse diffusion coefficient

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Ratio of transverse diffusion coefficient to mobility of electrons in high-pressure xenon. / Kobayashi, Shingo; Hasebe, Nobuyuki; Igarashi, Tsutomu; Miyachi, Takashi; Miyajima, Mitsuhiro; Okada, Hiroyuki; Doke, Tadayoshi; Shibamura, Eido; Dmitrenko, Valery V.; Vlasik, Konstantin F.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 8 A, 01.08.2004, p. 5568-5572.

    Research output: Contribution to journalArticle

    Kobayashi, S, Hasebe, N, Igarashi, T, Miyachi, T, Miyajima, M, Okada, H, Doke, T, Shibamura, E, Dmitrenko, VV & Vlasik, KF 2004, 'Ratio of transverse diffusion coefficient to mobility of electrons in high-pressure xenon', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 43, no. 8 A, pp. 5568-5572. https://doi.org/10.1143/JJAP.43.5568
    Kobayashi, Shingo ; Hasebe, Nobuyuki ; Igarashi, Tsutomu ; Miyachi, Takashi ; Miyajima, Mitsuhiro ; Okada, Hiroyuki ; Doke, Tadayoshi ; Shibamura, Eido ; Dmitrenko, Valery V. ; Vlasik, Konstantin F. / Ratio of transverse diffusion coefficient to mobility of electrons in high-pressure xenon. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 8 A. pp. 5568-5572.
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