Reactions and diffusion of atomic and molecular oxygen in the SiO2 network

K. Tatsumura, T. Shimura, E. Mishima, K. Kawamura, D. Yamasaki, H. Yamamoto, Takanobu Watanabe, M. Umeno, I. Ohdomari

    Research output: Contribution to journalArticle

    32 Citations (Scopus)

    Abstract

    To address the reactions and diffusion of atomic and molecular oxygen in SiO2, the modification of the SiO2 network on exposure to an atomic or molecular oxygen atmosphere is investigated by measuring the x-ray-diffraction profile of the residual order peak emanating from the oxide. Analyses of the peak intensity and its fringe pattern provide experimental evidence for the recent theoretical predictions, indicating that atomic oxygen is incorporated into the SiO2 network near the surface and diffuses toward the interface along with modifying it even at a low temperature of 400°C, whereas molecular oxygen diffuses without reacting with the bulk SiO2 even at a temperature of 850°C that is sufficiently high for oxidation reaction at the interface.

    Original languageEnglish
    Article number045205
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume72
    Issue number4
    DOIs
    Publication statusPublished - 2005 Jul 15

    Fingerprint

    Molecular oxygen
    oxygen
    Oxides
    Diffraction
    Oxygen
    X rays
    Oxidation
    Temperature
    x ray diffraction
    diffraction patterns
    atmospheres
    oxidation
    oxides
    profiles
    predictions
    temperature

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Tatsumura, K., Shimura, T., Mishima, E., Kawamura, K., Yamasaki, D., Yamamoto, H., ... Ohdomari, I. (2005). Reactions and diffusion of atomic and molecular oxygen in the SiO2 network. Physical Review B - Condensed Matter and Materials Physics, 72(4), [045205]. https://doi.org/10.1103/PhysRevB.72.045205

    Reactions and diffusion of atomic and molecular oxygen in the SiO2 network. / Tatsumura, K.; Shimura, T.; Mishima, E.; Kawamura, K.; Yamasaki, D.; Yamamoto, H.; Watanabe, Takanobu; Umeno, M.; Ohdomari, I.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 4, 045205, 15.07.2005.

    Research output: Contribution to journalArticle

    Tatsumura, K, Shimura, T, Mishima, E, Kawamura, K, Yamasaki, D, Yamamoto, H, Watanabe, T, Umeno, M & Ohdomari, I 2005, 'Reactions and diffusion of atomic and molecular oxygen in the SiO2 network', Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 4, 045205. https://doi.org/10.1103/PhysRevB.72.045205
    Tatsumura, K. ; Shimura, T. ; Mishima, E. ; Kawamura, K. ; Yamasaki, D. ; Yamamoto, H. ; Watanabe, Takanobu ; Umeno, M. ; Ohdomari, I. / Reactions and diffusion of atomic and molecular oxygen in the SiO2 network. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 72, No. 4.
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    AU - Kawamura, K.

    AU - Yamasaki, D.

    AU - Yamamoto, H.

    AU - Watanabe, Takanobu

    AU - Umeno, M.

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