Readout ASIC with SOI technology for X-ray CCDs

Tetsuichi Kishishita, Toshihiro Idehara, Hirokazu Ikeda, Hiroshi Tsunemi, Yasuo Arai, Goro Sato, Tadayuki Takahashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We developed an analog front-end application specific integrated circuit (ASIC) with a fully depleted (FD) silicon-on-insulator (SOI) technology for readout of X-ray CCDs. The ASIC contains seven readout channels, each of which is equipped with the correlated double sampling circuit followed by an amplitude-to-pulse width conversion circuit. We combined the ASIC with an X-ray CCD for performance evaluation tests. We succeeded in processing analog signals from the CCD and confirmed an X-ray imaging and photon-counting capabilities by irradiating a radioisotope 55Fe. The energy resolution is 305 eV at 5.9 keV (full-width at half maximum) and the readout noise is 53.7 μV for power consumption of 33 mW per chip. The ASIC proves that the FD-SOI process can be a practically usable option for front-end applications.

Original languageEnglish
Article number5497180
Pages (from-to)2359-2364
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Aug

Keywords

  • Analog front-end
  • ASIC
  • CCD
  • low noise
  • SOI (silicon-on-insulator)
  • VLSI
  • X-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Fingerprint Dive into the research topics of 'Readout ASIC with SOI technology for X-ray CCDs'. Together they form a unique fingerprint.

  • Cite this

    Kishishita, T., Idehara, T., Ikeda, H., Tsunemi, H., Arai, Y., Sato, G., & Takahashi, T. (2010). Readout ASIC with SOI technology for X-ray CCDs. IEEE Transactions on Nuclear Science, 57(4 PART 2), 2359-2364. [5497180]. https://doi.org/10.1109/TNS.2010.2049371