Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

M. Miyachi, Y. Ohira, S. Komatsu, M. Kurihara, N. Shimoyama, M. Kobayashi, Y. Kato, A. Yoshikawa

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2 Citations (Scopus)

Abstract

Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
Publication statusPublished - 1996 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Miyachi, M., Ohira, Y., Komatsu, S., Kurihara, M., Shimoyama, N., Kobayashi, M., Kato, Y., & Yoshikawa, A. (1996). Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. Journal of Crystal Growth, 159(1-4), 261-265. https://doi.org/10.1016/0022-0248(95)00718-0