Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

M. Miyachi, Y. Ohira, S. Komatsu, M. Kurihara, N. Shimoyama, Masakazu Kobayashi, Y. Kato, A. Yoshikawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Doping (additives)
Monitoring
reflectance
periodic variations
amines
Amines
Laser beams
laser beams
Monolayers
interference
oscillations
Molecules
molecules

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Miyachi, M., Ohira, Y., Komatsu, S., Kurihara, M., Shimoyama, N., Kobayashi, M., ... Yoshikawa, A. (1996). Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. Journal of Crystal Growth, 159(1-4), 261-265.

Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. / Miyachi, M.; Ohira, Y.; Komatsu, S.; Kurihara, M.; Shimoyama, N.; Kobayashi, Masakazu; Kato, Y.; Yoshikawa, A.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 261-265.

Research output: Contribution to journalArticle

Miyachi, M, Ohira, Y, Komatsu, S, Kurihara, M, Shimoyama, N, Kobayashi, M, Kato, Y & Yoshikawa, A 1996, 'Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe', Journal of Crystal Growth, vol. 159, no. 1-4, pp. 261-265.
Miyachi M, Ohira Y, Komatsu S, Kurihara M, Shimoyama N, Kobayashi M et al. Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. Journal of Crystal Growth. 1996 Feb;159(1-4):261-265.
Miyachi, M. ; Ohira, Y. ; Komatsu, S. ; Kurihara, M. ; Shimoyama, N. ; Kobayashi, Masakazu ; Kato, Y. ; Yoshikawa, A. / Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 261-265.
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