Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

M. Miyachi; Y. Ohira; S. Komatsu; M. Kurihara; N. Shimoyama; M. Kobayashi; Y. Kato; A. Yoshikawa

doi:10.1016/0022-0248(95)00718-0

Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

M. Miyachi, Y. Ohira, S. Komatsu, M. Kurihara, N. Shimoyama, M. Kobayashi, Y. Kato, A. Yoshikawa

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH₂) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH₂ molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.

Original language	English
Pages (from-to)	261-265
Number of pages	5
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00718-0
Publication status	Published - 1996 Feb
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Miyachi, M., Ohira, Y., Komatsu, S., Kurihara, M., Shimoyama, N., Kobayashi, M., Kato, Y., & Yoshikawa, A. (1996). Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. Journal of Crystal Growth, 159(1-4), 261-265. https://doi.org/10.1016/0022-0248(95)00718-0

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title = "Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe",

abstract = "Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the {"}Zn-terminated{"} surface and not on the {"}Se-terminated{"} surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.",

author = "M. Miyachi and Y. Ohira and S. Komatsu and M. Kurihara and N. Shimoyama and M. Kobayashi and Y. Kato and A. Yoshikawa",

year = "1996",

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T1 - Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

AU - Miyachi, M.

AU - Ohira, Y.

AU - Komatsu, S.

AU - Kurihara, M.

AU - Shimoyama, N.

AU - Kobayashi, M.

AU - Kato, Y.

AU - Yoshikawa, A.

PY - 1996/2

Y1 - 1996/2

N2 - Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.

AB - Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.

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