TY - JOUR
T1 - Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe
AU - Miyachi, M.
AU - Ohira, Y.
AU - Komatsu, S.
AU - Kurihara, M.
AU - Shimoyama, N.
AU - Kobayashi, M.
AU - Kato, Y.
AU - Yoshikawa, A.
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Educa- tion, Science and Culture of Japan, and also in part by the Hoso-Bunka Foundation.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1996/2
Y1 - 1996/2
N2 - Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.
AB - Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.
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U2 - 10.1016/0022-0248(95)00718-0
DO - 10.1016/0022-0248(95)00718-0
M3 - Article
AN - SCOPUS:0030562478
VL - 159
SP - 261
EP - 265
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -