Abstract
Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.
| Original language | English |
|---|---|
| Pages (from-to) | 261-265 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 159 |
| Issue number | 1-4 |
| Publication status | Published - 1996 Feb |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe. / Miyachi, M.; Ohira, Y.; Komatsu, S.; Kurihara, M.; Shimoyama, N.; Kobayashi, Masakazu; Kato, Y.; Yoshikawa, A.
In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 261-265.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe
AU - Miyachi, M.
AU - Ohira, Y.
AU - Komatsu, S.
AU - Kurihara, M.
AU - Shimoyama, N.
AU - Kobayashi, Masakazu
AU - Kato, Y.
AU - Yoshikawa, A.
PY - 1996/2
Y1 - 1996/2
N2 - Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.
AB - Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl-amine (tBNH2) was extensively used in this work, because it is one of the most useful dopant sources in photo-assisted MOVPE of widegap II-VI compounds. Oscillations with monolayer periodicity in RD signal traces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is that tBNH2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface; this suggests that selective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.
UR - http://www.scopus.com/inward/record.url?scp=0030562478&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030562478&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030562478
VL - 159
SP - 261
EP - 265
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -