Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita, Kazuhiko Kusunoki, Kazuhito Kamei, Hiroshi Suzuki, Hidemitsu Sakamoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Real-time observation of the high temperature interface between silicon carbide (SiC) and liquid alloy is indispensable to optimize the conditions for producing high quality SiC crystals by the solution growth method. In this work, real-time observation of the interface was established by using the interference observation to measure the height profile of the interface. The temperature dependence of the refractive index of 4H-SiC was measured up to 1773 K. The height measurement was then carried out for the SiC/alloy interface at 1573 K. From interference observation, bunched step heights of less than 10 nm were measured. The developed technique was applied for the real-time observation of dissolution behavior of SiC into molten Fe-Si alloy at 1573 K. The dissolution kinetics was discussed in terms of carbon mass transfer in the solution and interfacial reaction.

Original languageEnglish
Article number214313
JournalJournal of Applied Physics
Volume114
Issue number21
DOIs
Publication statusPublished - 2013 Dec 7
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this