Real-time scanning tunneling microscopy observation of Si(111) surface modified by Au+ ion irradiation

Takefumi Kamioka, Kou Sato, Yutaka Kazama, Iwao Ohdomari, Takanobu Watanabe

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The real-time scanning tunneling microscopy (STM) observation of Au + ion irradiation effects on a high-temperature Si surface has been performed using our original ion gun and STM combined system. Sequential STM images of a Si(111)-7×7 surface kept at 500 °C have been obtained before, during, and after Au+ ion irradiation with 3 keV. Vacancy islands, which are two-dimensional clusters of surface vacancies, and 5×2-Au structures were formed on the sample surface, and their size were changed during the heat treatment after the ion irradiation. This method enables us to count exact numbers of vacancies and Au atoms on the surface by measuring the sizes of vacancy islands and 5×2-Au reconstructions. The timescale of the growth of the 5×2-Au domain suggests that the implanted Au atoms diffuse to the surface almost without interacting with point defects induced by the ion irradiation.

    Original languageEnglish
    Article number015702
    JournalJapanese Journal of Applied Physics
    Volume49
    Issue number1 Part 1
    DOIs
    Publication statusPublished - 2010

    Fingerprint

    Scanning tunneling microscopy
    Ion bombardment
    ion irradiation
    scanning tunneling microscopy
    Vacancies
    Atoms
    Ion sources
    Point defects
    point defects
    atoms
    heat treatment
    Heat treatment
    ions

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Real-time scanning tunneling microscopy observation of Si(111) surface modified by Au+ ion irradiation. / Kamioka, Takefumi; Sato, Kou; Kazama, Yutaka; Ohdomari, Iwao; Watanabe, Takanobu.

    In: Japanese Journal of Applied Physics, Vol. 49, No. 1 Part 1, 015702, 2010.

    Research output: Contribution to journalArticle

    @article{83f451999646484d82b463f9dc247208,
    title = "Real-time scanning tunneling microscopy observation of Si(111) surface modified by Au+ ion irradiation",
    abstract = "The real-time scanning tunneling microscopy (STM) observation of Au + ion irradiation effects on a high-temperature Si surface has been performed using our original ion gun and STM combined system. Sequential STM images of a Si(111)-7×7 surface kept at 500 °C have been obtained before, during, and after Au+ ion irradiation with 3 keV. Vacancy islands, which are two-dimensional clusters of surface vacancies, and 5×2-Au structures were formed on the sample surface, and their size were changed during the heat treatment after the ion irradiation. This method enables us to count exact numbers of vacancies and Au atoms on the surface by measuring the sizes of vacancy islands and 5×2-Au reconstructions. The timescale of the growth of the 5×2-Au domain suggests that the implanted Au atoms diffuse to the surface almost without interacting with point defects induced by the ion irradiation.",
    author = "Takefumi Kamioka and Kou Sato and Yutaka Kazama and Iwao Ohdomari and Takanobu Watanabe",
    year = "2010",
    doi = "10.1143/JJAP.49.015702",
    language = "English",
    volume = "49",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "1 Part 1",

    }

    TY - JOUR

    T1 - Real-time scanning tunneling microscopy observation of Si(111) surface modified by Au+ ion irradiation

    AU - Kamioka, Takefumi

    AU - Sato, Kou

    AU - Kazama, Yutaka

    AU - Ohdomari, Iwao

    AU - Watanabe, Takanobu

    PY - 2010

    Y1 - 2010

    N2 - The real-time scanning tunneling microscopy (STM) observation of Au + ion irradiation effects on a high-temperature Si surface has been performed using our original ion gun and STM combined system. Sequential STM images of a Si(111)-7×7 surface kept at 500 °C have been obtained before, during, and after Au+ ion irradiation with 3 keV. Vacancy islands, which are two-dimensional clusters of surface vacancies, and 5×2-Au structures were formed on the sample surface, and their size were changed during the heat treatment after the ion irradiation. This method enables us to count exact numbers of vacancies and Au atoms on the surface by measuring the sizes of vacancy islands and 5×2-Au reconstructions. The timescale of the growth of the 5×2-Au domain suggests that the implanted Au atoms diffuse to the surface almost without interacting with point defects induced by the ion irradiation.

    AB - The real-time scanning tunneling microscopy (STM) observation of Au + ion irradiation effects on a high-temperature Si surface has been performed using our original ion gun and STM combined system. Sequential STM images of a Si(111)-7×7 surface kept at 500 °C have been obtained before, during, and after Au+ ion irradiation with 3 keV. Vacancy islands, which are two-dimensional clusters of surface vacancies, and 5×2-Au structures were formed on the sample surface, and their size were changed during the heat treatment after the ion irradiation. This method enables us to count exact numbers of vacancies and Au atoms on the surface by measuring the sizes of vacancy islands and 5×2-Au reconstructions. The timescale of the growth of the 5×2-Au domain suggests that the implanted Au atoms diffuse to the surface almost without interacting with point defects induced by the ion irradiation.

    UR - http://www.scopus.com/inward/record.url?scp=77950815037&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77950815037&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.49.015702

    DO - 10.1143/JJAP.49.015702

    M3 - Article

    VL - 49

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 1 Part 1

    M1 - 015702

    ER -