Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices

Masakazu Kobayashi; Shiro Dosho; Akira Imai; Ryuhei Kimura; Makoto Konagai; Kiyoshi Takahashi

doi:10.1063/1.98568

Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices

Masakazu Kobayashi^*, Shiro Dosho, Akira Imai, Ryuhei Kimura, Makoto Konagai, Kiyoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The conduction types of ZnSe-ZnTe strained-layer superlattices (SLS's) have been controlled by using the modulation doping technique. Two kinds of modulation-doped SLS's were prepared. One of them consisted of gallium (Ga) doped ZnSe layers and undoped ZnTe layers. The other consisted of undoped ZnSe layers and antimony (Sb) doped ZnTe layers. The conduction types of the samples modulation doped with Ga and Sb were shown to be n and p type, respectively whereas the undoped samples exhibited n-type conduction. The electrical properties of the undoped and modulation-doped samples were evaluated by the van der Pauw method. The carrier concentrations of all types of samples were about 5×10¹³/cm³ at room temperature. The temperature dependence of the electrical properties was measured for an undoped sample and a sample modulation doped with Sb. The carrier concentrations increased with temperature and reached about 1×10¹ ⁷/cm³ at 500 K.

Original language	English
Pages (from-to)	1602-1604
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	20
DOIs	https://doi.org/10.1063/1.98568
Publication status	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices",

abstract = "The conduction types of ZnSe-ZnTe strained-layer superlattices (SLS's) have been controlled by using the modulation doping technique. Two kinds of modulation-doped SLS's were prepared. One of them consisted of gallium (Ga) doped ZnSe layers and undoped ZnTe layers. The other consisted of undoped ZnSe layers and antimony (Sb) doped ZnTe layers. The conduction types of the samples modulation doped with Ga and Sb were shown to be n and p type, respectively whereas the undoped samples exhibited n-type conduction. The electrical properties of the undoped and modulation-doped samples were evaluated by the van der Pauw method. The carrier concentrations of all types of samples were about 5×1013/cm3 at room temperature. The temperature dependence of the electrical properties was measured for an undoped sample and a sample modulation doped with Sb. The carrier concentrations increased with temperature and reached about 1×101 7/cm3 at 500 K.",

author = "Masakazu Kobayashi and Shiro Dosho and Akira Imai and Ryuhei Kimura and Makoto Konagai and Kiyoshi Takahashi",

year = "1987",

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T1 - Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices

AU - Kobayashi, Masakazu

AU - Dosho, Shiro

AU - Imai, Akira

AU - Kimura, Ryuhei

AU - Konagai, Makoto

AU - Takahashi, Kiyoshi

PY - 1987

Y1 - 1987

N2 - The conduction types of ZnSe-ZnTe strained-layer superlattices (SLS's) have been controlled by using the modulation doping technique. Two kinds of modulation-doped SLS's were prepared. One of them consisted of gallium (Ga) doped ZnSe layers and undoped ZnTe layers. The other consisted of undoped ZnSe layers and antimony (Sb) doped ZnTe layers. The conduction types of the samples modulation doped with Ga and Sb were shown to be n and p type, respectively whereas the undoped samples exhibited n-type conduction. The electrical properties of the undoped and modulation-doped samples were evaluated by the van der Pauw method. The carrier concentrations of all types of samples were about 5×1013/cm3 at room temperature. The temperature dependence of the electrical properties was measured for an undoped sample and a sample modulation doped with Sb. The carrier concentrations increased with temperature and reached about 1×101 7/cm3 at 500 K.

AB - The conduction types of ZnSe-ZnTe strained-layer superlattices (SLS's) have been controlled by using the modulation doping technique. Two kinds of modulation-doped SLS's were prepared. One of them consisted of gallium (Ga) doped ZnSe layers and undoped ZnTe layers. The other consisted of undoped ZnSe layers and antimony (Sb) doped ZnTe layers. The conduction types of the samples modulation doped with Ga and Sb were shown to be n and p type, respectively whereas the undoped samples exhibited n-type conduction. The electrical properties of the undoped and modulation-doped samples were evaluated by the van der Pauw method. The carrier concentrations of all types of samples were about 5×1013/cm3 at room temperature. The temperature dependence of the electrical properties was measured for an undoped sample and a sample modulation doped with Sb. The carrier concentrations increased with temperature and reached about 1×101 7/cm3 at 500 K.

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Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices

Abstract

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