Realization of graphene field-effect transistor with high-κ HCa 2Nb3O10 nanoflake as top-gate dielectric

Wenwu Li, Song Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi

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Abstract

A high-quality HCa2Nb3O10 (HCNO) nanoflake (εr = 9.1) consisting of high-κ perovskite nanosheets is adopted as a gate dielectric for graphene-based electronics. A dual-gated device was physically constructed by directly dry-transferring a 22-nm-thick HCNO nanoflake as a top gate dielectric onto graphene. The fabricated graphene field-effect transistor could be operated at biases <1.5 V with a gate leakage below 1 pA. The top-gate capacitance and mobility of the dual-gated graphene device at room temperature were estimated to be 367 nF/cm2 and 2500 cm2/V·s, respectively. These results show that HCNO can be employed as an alternative dielectric for graphene-based devices.

Original languageEnglish
Article number023113
JournalApplied Physics Letters
Volume103
Issue number2
DOIs
Publication statusPublished - 2013 Jul 8
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Li, W., Li, S. L., Komatsu, K., Aparecido-Ferreira, A., Lin, Y. F., Xu, Y., Osada, M., Sasaki, T., & Tsukagoshi, K. (2013). Realization of graphene field-effect transistor with high-κ HCa 2Nb3O10 nanoflake as top-gate dielectric. Applied Physics Letters, 103(2), [023113]. https://doi.org/10.1063/1.4813537