Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura, Eiji Shikoh, Kosuke Sawabe, Taishi Takenobu, Masashi Shiraishi

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

    Original languageEnglish
    Article number073501
    JournalApplied Physics Letters
    Volume101
    Issue number7
    DOIs
    Publication statusPublished - 2012 Aug 13

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    single crystals
    nickel
    molybdenum
    insertion
    electric contacts
    injection
    electrons

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Kitamura, Y., Shikoh, E., Sawabe, K., Takenobu, T., & Shiraishi, M. (2012). Realization of ohmic-like contact between ferromagnet and rubrene single crystal. Applied Physics Letters, 101(7), [073501]. https://doi.org/10.1063/1.4745778

    Realization of ohmic-like contact between ferromagnet and rubrene single crystal. / Kitamura, Yuta; Shikoh, Eiji; Sawabe, Kosuke; Takenobu, Taishi; Shiraishi, Masashi.

    In: Applied Physics Letters, Vol. 101, No. 7, 073501, 13.08.2012.

    Research output: Contribution to journalArticle

    Kitamura, Y, Shikoh, E, Sawabe, K, Takenobu, T & Shiraishi, M 2012, 'Realization of ohmic-like contact between ferromagnet and rubrene single crystal', Applied Physics Letters, vol. 101, no. 7, 073501. https://doi.org/10.1063/1.4745778
    Kitamura, Yuta ; Shikoh, Eiji ; Sawabe, Kosuke ; Takenobu, Taishi ; Shiraishi, Masashi. / Realization of ohmic-like contact between ferromagnet and rubrene single crystal. In: Applied Physics Letters. 2012 ; Vol. 101, No. 7.
    @article{9baaeb8a804341caa0e5131daf34b591,
    title = "Realization of ohmic-like contact between ferromagnet and rubrene single crystal",
    abstract = "We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.",
    author = "Yuta Kitamura and Eiji Shikoh and Kosuke Sawabe and Taishi Takenobu and Masashi Shiraishi",
    year = "2012",
    month = "8",
    day = "13",
    doi = "10.1063/1.4745778",
    language = "English",
    volume = "101",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "7",

    }

    TY - JOUR

    T1 - Realization of ohmic-like contact between ferromagnet and rubrene single crystal

    AU - Kitamura, Yuta

    AU - Shikoh, Eiji

    AU - Sawabe, Kosuke

    AU - Takenobu, Taishi

    AU - Shiraishi, Masashi

    PY - 2012/8/13

    Y1 - 2012/8/13

    N2 - We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

    AB - We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

    UR - http://www.scopus.com/inward/record.url?scp=84865412983&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84865412983&partnerID=8YFLogxK

    U2 - 10.1063/1.4745778

    DO - 10.1063/1.4745778

    M3 - Article

    AN - SCOPUS:84865412983

    VL - 101

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 7

    M1 - 073501

    ER -