RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Yuichi Matsushima; N. Seki; S. Akiba; Y. Noda; Y. Kushiro

RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Yuichi Matsushima, N. Seki, S. Akiba, Y. Noda, Y. Kushiro

Research output: Contribution to journal › Article

Abstract

The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

Original language	English
Pages (from-to)	845-846
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	20
Publication status	Published - 1983 Jan 1
Externally published	Yes

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Matsushima, Y., Seki, N., Akiba, S., Noda, Y., & Kushiro, Y. (1983). RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION. Electronics Letters, 19(20), 845-846.

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abstract = "The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.",

author = "Yuichi Matsushima and N. Seki and S. Akiba and Y. Noda and Y. Kushiro",

year = "1983",

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T1 - RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

AU - Matsushima, Yuichi

AU - Seki, N.

AU - Akiba, S.

AU - Noda, Y.

AU - Kushiro, Y.

PY - 1983/1/1

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N2 - The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

AB - The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

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JF - Electronics Letters

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RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Abstract

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