RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Yuichi Matsushima; N. Seki; S. Akiba; Y. Noda; Y. Kushiro

RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Yuichi Matsushima^*, N. Seki, S. Akiba, Y. Noda, Y. Kushiro

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

Original language	English
Pages (from-to)	845-846
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	20
Publication status	Published - 1983 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.",

abstract = "The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.",

author = "Yuichi Matsushima and N. Seki and S. Akiba and Y. Noda and Y. Kushiro",

year = "1983",

month = jan,

day = "1",

language = "English",

volume = "19",

pages = "845--846",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

AU - Matsushima, Yuichi

AU - Seki, N.

AU - Akiba, S.

AU - Noda, Y.

AU - Kushiro, Y.

PY - 1983/1/1

Y1 - 1983/1/1

N2 - The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

AB - The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.

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M3 - Article

AN - SCOPUS:0020813334

VL - 19

SP - 845

EP - 846

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 20

ER -

RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Abstract

ASJC Scopus subject areas

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