Abstract
The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.
| Original language | English |
|---|---|
| Pages (from-to) | 845-846 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 19 |
| Issue number | 20 |
| Publication status | Published - 1983 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.'. Together they form a unique fingerprint.
Cite this
Matsushima, Y., Seki, N., Akiba, S., Noda, Y., & Kushiro, Y. (1983). RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION. Electronics Letters, 19(20), 845-846.