Abstract
The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1. 5-1. 6 mu m wavelength and 280 Mbit/s, was minus 38. 7 dbm for a 10** minus **9 error rate, although the optimizations were not performed. But this sensitivity was better than that of a p** plus -n Ge-APD by 2. 5 db at 1. 59 mu m wavelength.
Original language | English |
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Pages (from-to) | 845-846 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 19 |
Issue number | 20 |
Publication status | Published - 1983 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering