RECEIVER SENSITIVITY OF InGaAs/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH InGaAsP BUFFER LAYERS AT 1. 5-1. 6 mu m REGION.

Yuichi Matsushima, N. Seki, S. Akiba, Y. Noda, Y. Kushiro

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9 Citations (Scopus)

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Engineering & Materials Science