Recent development of nitirde heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Nitride heterojunction bipolar transistors (HBTs) are expected for high-power and high-temperature applications. However, there were two major issues that had to be addressed for these nitride HBTs. One was low current gains, and the other was large offset voltages. Recently, to solve these two issues, we have developed extrinsic base regrowth of p-InGaN and successfully fabricated Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs had low-resistive p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high-breakdown voltage characteristics as well as high-current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable to high-power electronic devices.

Original languageEnglish
Pages395-404
Number of pages10
Publication statusPublished - 2004 Dec 1
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Makimoto, T., & Kumakura, K. (2004). Recent development of nitirde heterojunction bipolar transistors. 395-404. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.