Recent development of nitirde heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nitride heterojunction bipolar transistors (HBTs) are expected for high-power and high-temperature applications. However, there were two major issues that had to be addressed for these nitride HBTs. One was low current gains, and the other was large offset voltages. Recently, to solve these two issues, we have developed extrinsic base regrowth of p-InGaN and successfully fabricated Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs had low-resistive p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high-breakdown voltage characteristics as well as high-current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable to high-power electronic devices.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsH.M. Ng, A.G. Baca
Pages395-404
Number of pages10
Volume6
Publication statusPublished - 2004
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI
Duration: 2004 Oct 32004 Oct 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CityHonolulu, HI
Period04/10/304/10/8

Fingerprint

Heterojunction bipolar transistors
Nitrides
High temperature applications
Electric potential
Power electronics
Electric breakdown
Energy gap
Current density

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., & Kumakura, K. (2004). Recent development of nitirde heterojunction bipolar transistors. In H. M. Ng, & A. G. Baca (Eds.), Proceedings - Electrochemical Society (Vol. 6, pp. 395-404)

Recent development of nitirde heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, Kazuhide.

Proceedings - Electrochemical Society. ed. / H.M. Ng; A.G. Baca. Vol. 6 2004. p. 395-404.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T & Kumakura, K 2004, Recent development of nitirde heterojunction bipolar transistors. in HM Ng & AG Baca (eds), Proceedings - Electrochemical Society. vol. 6, pp. 395-404, State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, 04/10/3.
Makimoto T, Kumakura K. Recent development of nitirde heterojunction bipolar transistors. In Ng HM, Baca AG, editors, Proceedings - Electrochemical Society. Vol. 6. 2004. p. 395-404
Makimoto, Toshiki ; Kumakura, Kazuhide. / Recent development of nitirde heterojunction bipolar transistors. Proceedings - Electrochemical Society. editor / H.M. Ng ; A.G. Baca. Vol. 6 2004. pp. 395-404
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