Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy

A. Kawaharazuka, J. Nishinaga, Y. Horikoshi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigate the effect of the recombination current of p-i-n junction solar-cells. We develop a simple evaluation method of the recombination and diffusion current component of the solar-cells based on the measured three characteristic values: short circuit current, open circuit voltage, and fill factor without the knowledge in the details of the device structure. The advantage of the developed technique is its simplicity and wide applicability to various p-i-n junction solar-cells. We apply the method to GaAs bulk and AlGaAs/GaAs superlattice solar-cells. Obtained parameters well reproduce the whole current-voltage characteristics. The diode current is almost dominated by the recombination current at the maximum-output voltage for both GaAs bulk and superlattice cells. The higher contribution of the recombination current in the superlattice solar-cell is due to the quality of the AlGaAs barriers and the AlGaAs/GaAs interfaces. This result indicates that the good crystalline quality is important to enhance the efficiency of the solar-cells.

Original languageEnglish
JournalJournal of Crystal Growth
DOIs
Publication statusAccepted/In press - 2015

Fingerprint

Molecular beam epitaxy
aluminum gallium arsenides
Solar cells
molecular beam epitaxy
solar cells
p-i-n junctions
electric potential
Open circuit voltage
Current voltage characteristics
short circuit currents
open circuit voltage
Short circuit currents
gallium arsenide
Diodes
diodes
Crystalline materials
evaluation
output
Electric potential
cells

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Semiconducting gallium arsenide
  • B2. Semiconducting III-V materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy. / Kawaharazuka, A.; Nishinaga, J.; Horikoshi, Y.

In: Journal of Crystal Growth, 2015.

Research output: Contribution to journalArticle

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AU - Kawaharazuka, A.

AU - Nishinaga, J.

AU - Horikoshi, Y.

PY - 2015

Y1 - 2015

N2 - We investigate the effect of the recombination current of p-i-n junction solar-cells. We develop a simple evaluation method of the recombination and diffusion current component of the solar-cells based on the measured three characteristic values: short circuit current, open circuit voltage, and fill factor without the knowledge in the details of the device structure. The advantage of the developed technique is its simplicity and wide applicability to various p-i-n junction solar-cells. We apply the method to GaAs bulk and AlGaAs/GaAs superlattice solar-cells. Obtained parameters well reproduce the whole current-voltage characteristics. The diode current is almost dominated by the recombination current at the maximum-output voltage for both GaAs bulk and superlattice cells. The higher contribution of the recombination current in the superlattice solar-cell is due to the quality of the AlGaAs barriers and the AlGaAs/GaAs interfaces. This result indicates that the good crystalline quality is important to enhance the efficiency of the solar-cells.

AB - We investigate the effect of the recombination current of p-i-n junction solar-cells. We develop a simple evaluation method of the recombination and diffusion current component of the solar-cells based on the measured three characteristic values: short circuit current, open circuit voltage, and fill factor without the knowledge in the details of the device structure. The advantage of the developed technique is its simplicity and wide applicability to various p-i-n junction solar-cells. We apply the method to GaAs bulk and AlGaAs/GaAs superlattice solar-cells. Obtained parameters well reproduce the whole current-voltage characteristics. The diode current is almost dominated by the recombination current at the maximum-output voltage for both GaAs bulk and superlattice cells. The higher contribution of the recombination current in the superlattice solar-cell is due to the quality of the AlGaAs barriers and the AlGaAs/GaAs interfaces. This result indicates that the good crystalline quality is important to enhance the efficiency of the solar-cells.

KW - A1. Characterization

KW - A3. Molecular beam epitaxy

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KW - B2. Semiconducting gallium arsenide

KW - B2. Semiconducting III-V materials

KW - B3. Solar cells

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