Recombination dynamics of a 268 nm emission peak in Al 0.53in0.11Ga0.36N/Al0.58in 0.02Ga0.40N multiple quantum wells

T. Onuma, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, S. F. Chichibu*

*Corresponding author for this work

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21 Citations (Scopus)


Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al0.53In0.36Ga0.36N/Al 0.58In0.02Ga0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively strained Al0.53In0.11Ga 0.36N wells was as high as 1.6 MV/cm, the value of integrated PL intensity at 300 K divided by that at 8 K (ηint) was as high as 1.2%. The value was similar to that obtained for the 285 nm PL peak in an Al0.30Ga0.70N/Al0.70Ga0.30N MQW (1.3%), though the AlN molar fraction in the wells was higher by a factor of 1.7. According to these results and the fact that time-resolved PL signal exhibited a stretched exponential decay shape, the improved ηint of the AlInGaN wells was attributed to a beneficial effect of the exciton localization as is the case with InGaN alloys; doping or alloying with InN was confirmed to work also on AlGaN in improving ηint to realize deep UV optoelectronic devices.

Original languageEnglish
Article number111912
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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