Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu, Y. Uchinuma, Takayuki Sota, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki

    Research output: Contribution to journalArticle

    58 Citations (Scopus)

    Abstract

    Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

    Original languageEnglish
    Pages (from-to)2449-2453
    Number of pages5
    JournalJournal of Applied Physics
    Volume94
    Issue number4
    DOIs
    Publication statusPublished - 2003 Aug 15

    Fingerprint

    radiative recombination
    vapor phase epitaxy
    spontaneous emission
    templates
    excitons
    photoluminescence
    decay

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Cite this

    Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy. / Onuma, T.; Chichibu, S. F.; Uchinuma, Y.; Sota, Takayuki; Yamaguchi, S.; Kamiyama, S.; Amano, H.; Akasaki, I.

    In: Journal of Applied Physics, Vol. 94, No. 4, 15.08.2003, p. 2449-2453.

    Research output: Contribution to journalArticle

    Onuma, T. ; Chichibu, S. F. ; Uchinuma, Y. ; Sota, Takayuki ; Yamaguchi, S. ; Kamiyama, S. ; Amano, H. ; Akasaki, I. / Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 4. pp. 2449-2453.
    @article{af7ee1ab72244b779f4dce2d2c17d52a,
    title = "Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy",
    abstract = "Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.",
    author = "T. Onuma and Chichibu, {S. F.} and Y. Uchinuma and Takayuki Sota and S. Yamaguchi and S. Kamiyama and H. Amano and I. Akasaki",
    year = "2003",
    month = "8",
    day = "15",
    doi = "10.1063/1.1592868",
    language = "English",
    volume = "94",
    pages = "2449--2453",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "4",

    }

    TY - JOUR

    T1 - Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

    AU - Onuma, T.

    AU - Chichibu, S. F.

    AU - Uchinuma, Y.

    AU - Sota, Takayuki

    AU - Yamaguchi, S.

    AU - Kamiyama, S.

    AU - Amano, H.

    AU - Akasaki, I.

    PY - 2003/8/15

    Y1 - 2003/8/15

    N2 - Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

    AB - Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

    UR - http://www.scopus.com/inward/record.url?scp=0041422142&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0041422142&partnerID=8YFLogxK

    U2 - 10.1063/1.1592868

    DO - 10.1063/1.1592868

    M3 - Article

    VL - 94

    SP - 2449

    EP - 2453

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 4

    ER -