Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma; S. F. Chichibu; Y. Uchinuma; T. Sota; S. Yamaguchi; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1063/1.1592868

Recombination dynamics of localized excitons in Al_1-xIn _xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu^*, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Spontaneous emission mechanisms in strain-free Al_1-xIn _xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

Original language	English
Pages (from-to)	2449-2453
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1592868
Publication status	Published - 2003 Aug 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.",

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T1 - Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

AU - Onuma, T.

AU - Chichibu, S. F.

AU - Uchinuma, Y.

AU - Sota, T.

AU - Yamaguchi, S.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

PY - 2003/8/15

Y1 - 2003/8/15

N2 - Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

AB - Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

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JF - Journal of Applied Physics

IS - 4

ER -

Recombination dynamics of localized excitons in Al_1-xIn _xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

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