Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

Original languageEnglish
Pages (from-to)2449-2453
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
Publication statusPublished - 2003 Aug 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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