Recombination dynamics of localized excitons in Al1-xIn xN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu*, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

65 Citations (Scopus)

Abstract

Spontaneous emission mechanisms in strain-free Al1-xIn xN films on GaN templates were studied. They exhibited a large band-gap bowing with a bowing parameter of approximately -3.1eV. The time-resolved photoluminescence (TRPL) signals showed a stretched exponential decay up to 300 K, indicating that the emission was due to the radiative recombination of deeply localized excitons in disordered quantum nanostructures.

Original languageEnglish
Pages (from-to)2449-2453
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
Publication statusPublished - 2003 Aug 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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