Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

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Abstract

The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

Original languageEnglish
Pages (from-to)1856-1862
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
Publication statusPublished - 2003 Jul 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Chichibu, S. F., Onuma, T., Aoyama, T., Nakajima, K., Ahmet, P., Chikyow, T., Sota, T., DenBaars, S. P., Nakamura, S., Kitamura, T., Ishida, Y., & Okumura, H. (2003). Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1856-1862.