Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, Takayuki Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

    Research output: Contribution to journalArticle

    37 Citations (Scopus)

    Abstract

    The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

    Original languageEnglish
    Pages (from-to)1856-1862
    Number of pages7
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume21
    Issue number4
    Publication statusPublished - 2003 Jul

    Fingerprint

    Stark effect
    Molecular beam epitaxy
    Excitons
    Semiconductor quantum wells
    radio frequencies
    Photoluminescence
    molecular beam epitaxy
    excitons
    quantum wells
    Polarization
    Substrates
    photoluminescence
    decay
    polarization
    excitation

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Surfaces and Interfaces
    • Physics and Astronomy (miscellaneous)

    Cite this

    Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. / Chichibu, S. F.; Onuma, T.; Aoyama, T.; Nakajima, K.; Ahmet, P.; Chikyow, T.; Sota, Takayuki; DenBaars, S. P.; Nakamura, S.; Kitamura, T.; Ishida, Y.; Okumura, H.

    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1856-1862.

    Research output: Contribution to journalArticle

    Chichibu, SF, Onuma, T, Aoyama, T, Nakajima, K, Ahmet, P, Chikyow, T, Sota, T, DenBaars, SP, Nakamura, S, Kitamura, T, Ishida, Y & Okumura, H 2003, 'Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1856-1862.
    Chichibu, S. F. ; Onuma, T. ; Aoyama, T. ; Nakajima, K. ; Ahmet, P. ; Chikyow, T. ; Sota, Takayuki ; DenBaars, S. P. ; Nakamura, S. ; Kitamura, T. ; Ishida, Y. ; Okumura, H. / Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 4. pp. 1856-1862.
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    abstract = "The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.",
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    AU - Chichibu, S. F.

    AU - Onuma, T.

    AU - Aoyama, T.

    AU - Nakajima, K.

    AU - Ahmet, P.

    AU - Chikyow, T.

    AU - Sota, Takayuki

    AU - DenBaars, S. P.

    AU - Nakamura, S.

    AU - Kitamura, T.

    AU - Ishida, Y.

    AU - Okumura, H.

    PY - 2003/7

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