Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)

Sf Chichibu, T. Onuma, T. Kitamura, Takayuki Sota, S. P. DenBaars, S. Nakamura, H. Okumura

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Recombination dynamics of localized excitons in strained cubic (c-)InxGa1-xN/c-GaN multiple quantum wells (MQWs) were studied. In contrast to hexagonal (h-)InGaN quantum wells (QWs), low-excitation photoluminescence (PL) peak energy increased moderately with decreasing well thickness L and the PL decay time did not depend on L. The results indicated that piezoelectric field had negligible influence on the transition processes. The time-resolved photoluminescence (TRPL) signal showed a stretched exponential decay up to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nano-structures even at 300 K. Decrease in internal quantum efficiency (n), which is related to the increase in quasi-radiative lifetime, with the increase in temperature was explained to be due to reduced localization rate.

    Original languageEnglish
    Pages (from-to)746-749
    Number of pages4
    JournalPhysica Status Solidi (B) Basic Research
    Volume234
    Issue number3
    DOIs
    Publication statusPublished - 2002 Dec

    Fingerprint

    Excitons
    Semiconductor quantum wells
    Photoluminescence
    excitons
    quantum wells
    photoluminescence
    Spontaneous emission
    decay
    radiative lifetime
    radiative recombination
    Quantum efficiency
    spontaneous emission
    quantum efficiency
    excitation
    LDS 751
    Temperature
    temperature
    energy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001). / Chichibu, Sf; Onuma, T.; Kitamura, T.; Sota, Takayuki; DenBaars, S. P.; Nakamura, S.; Okumura, H.

    In: Physica Status Solidi (B) Basic Research, Vol. 234, No. 3, 12.2002, p. 746-749.

    Research output: Contribution to journalArticle

    Chichibu, Sf ; Onuma, T. ; Kitamura, T. ; Sota, Takayuki ; DenBaars, S. P. ; Nakamura, S. ; Okumura, H. / Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001). In: Physica Status Solidi (B) Basic Research. 2002 ; Vol. 234, No. 3. pp. 746-749.
    @article{2b4366baf1194d5d87c13ec62fc2f5af,
    title = "Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)",
    abstract = "Recombination dynamics of localized excitons in strained cubic (c-)InxGa1-xN/c-GaN multiple quantum wells (MQWs) were studied. In contrast to hexagonal (h-)InGaN quantum wells (QWs), low-excitation photoluminescence (PL) peak energy increased moderately with decreasing well thickness L and the PL decay time did not depend on L. The results indicated that piezoelectric field had negligible influence on the transition processes. The time-resolved photoluminescence (TRPL) signal showed a stretched exponential decay up to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nano-structures even at 300 K. Decrease in internal quantum efficiency (n), which is related to the increase in quasi-radiative lifetime, with the increase in temperature was explained to be due to reduced localization rate.",
    author = "Sf Chichibu and T. Onuma and T. Kitamura and Takayuki Sota and DenBaars, {S. P.} and S. Nakamura and H. Okumura",
    year = "2002",
    month = "12",
    doi = "10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0",
    language = "English",
    volume = "234",
    pages = "746--749",
    journal = "Physica Status Solidi (B): Basic Research",
    issn = "0370-1972",
    publisher = "Wiley-VCH Verlag",
    number = "3",

    }

    TY - JOUR

    T1 - Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)

    AU - Chichibu, Sf

    AU - Onuma, T.

    AU - Kitamura, T.

    AU - Sota, Takayuki

    AU - DenBaars, S. P.

    AU - Nakamura, S.

    AU - Okumura, H.

    PY - 2002/12

    Y1 - 2002/12

    N2 - Recombination dynamics of localized excitons in strained cubic (c-)InxGa1-xN/c-GaN multiple quantum wells (MQWs) were studied. In contrast to hexagonal (h-)InGaN quantum wells (QWs), low-excitation photoluminescence (PL) peak energy increased moderately with decreasing well thickness L and the PL decay time did not depend on L. The results indicated that piezoelectric field had negligible influence on the transition processes. The time-resolved photoluminescence (TRPL) signal showed a stretched exponential decay up to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nano-structures even at 300 K. Decrease in internal quantum efficiency (n), which is related to the increase in quasi-radiative lifetime, with the increase in temperature was explained to be due to reduced localization rate.

    AB - Recombination dynamics of localized excitons in strained cubic (c-)InxGa1-xN/c-GaN multiple quantum wells (MQWs) were studied. In contrast to hexagonal (h-)InGaN quantum wells (QWs), low-excitation photoluminescence (PL) peak energy increased moderately with decreasing well thickness L and the PL decay time did not depend on L. The results indicated that piezoelectric field had negligible influence on the transition processes. The time-resolved photoluminescence (TRPL) signal showed a stretched exponential decay up to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nano-structures even at 300 K. Decrease in internal quantum efficiency (n), which is related to the increase in quasi-radiative lifetime, with the increase in temperature was explained to be due to reduced localization rate.

    UR - http://www.scopus.com/inward/record.url?scp=0036924914&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0036924914&partnerID=8YFLogxK

    U2 - 10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0

    DO - 10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0

    M3 - Article

    VL - 234

    SP - 746

    EP - 749

    JO - Physica Status Solidi (B): Basic Research

    JF - Physica Status Solidi (B): Basic Research

    SN - 0370-1972

    IS - 3

    ER -