Recombination of localized excitons in InGaN single- and multiquantum-well structures

S. Chichibu, T. Azuhata, Takayuki Sota, S. Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)


Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Number of pages6
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6


OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chichibu, S., Azuhata, T., Sota, T., & Nakamura, S. (1997). Recombination of localized excitons in InGaN single- and multiquantum-well structures. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 653-658). Materials Research Society.