Reconstruction at the Ga<inf>2</inf> Se<inf>3</inf>/GaAs epitaxial interface

D. Li, Y. Nakamura, N. Otsuka, J. Qiu, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A highly developed two dimensional superstructure was found at the Ga<inf>2</inf>Se<inf>3</inf>/GaAs epitaxial interface by transmission electron microscope observations. The atomic arrangement of the superstructure was determined by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure is described as a c(2x2) ordered arrangement of vacancies on the interfacial Ga plane. A possible role of the mismatch of electronic configurations at the Ga<inf>2</inf>Se<inf>3</inf>/GaAs interface in the formation of the vacancy ordering is discussed.

Original languageEnglish
Pages (from-to)2167-2170
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
Publication statusPublished - 1991 Jul 1
Externally publishedYes

Fingerprint

Vacancies
Electron microscopes
electron microscopes
Electron diffraction
Diffraction patterns
diffraction patterns
electron diffraction
high resolution
configurations
electronics

Keywords

  • Electron diffraction
  • Ga<inf>2</inf>se<inf>3</inf>
  • GaAs
  • Gallium arsenides
  • Gallium selenides
  • Heterostructures
  • High-resolution methods
  • Interface structure
  • Molecular beam epitaxy
  • Surface reconstruction
  • Transmission electron microscopy
  • Vacancies

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Reconstruction at the Ga<inf>2</inf> Se<inf>3</inf>/GaAs epitaxial interface. / Li, D.; Nakamura, Y.; Otsuka, N.; Qiu, J.; Kobayashi, Masakazu; Gunshor, R. L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2167-2170.

Research output: Contribution to journalArticle

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AU - Gunshor, R. L.

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