Reconstruction at the Ga2 Se3/GaAs epitaxial interface

D. Li, Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A highly developed two dimensional superstructure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic arrangement of the superstructure was determined by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure is described as a c(2x2) ordered arrangement of vacancies on the interfacial Ga plane. A possible role of the mismatch of electronic configurations at the Ga2Se3/GaAs interface in the formation of the vacancy ordering is discussed.

Original languageEnglish
Pages (from-to)2167-2170
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
Publication statusPublished - 1991 Jul 1

Keywords

  • Electron diffraction
  • GaAs
  • Gallium arsenides
  • Gallium selenides
  • Gase
  • Heterostructures
  • High-resolution methods
  • Interface structure
  • Molecular beam epitaxy
  • Surface reconstruction
  • Transmission electron microscopy
  • Vacancies

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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