Abstract
Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.
| Original language | English |
|---|---|
| Pages (from-to) | L824-L826 |
| Journal | Japanese journal of applied physics |
| Volume | 24 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1985 Oct |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Kobayashi, N., & Makimoto, T. (1985). Reduced carbon contamination in OMVPE grown GaAs and AlGaAs. Japanese journal of applied physics, 24(10), L824-L826. https://doi.org/10.1143/JJAP.24.L824