Reduced carbon contamination in OMVPE grown GaAs and AlGaAs

Naoki Kobayashi; Toshiki Makimoto

doi:10.1143/JJAP.24.L824

Reduced carbon contamination in OMVPE grown GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.

Original language	English
Pages (from-to)	L824-L826
Journal	Japanese journal of applied physics
Volume	24
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.24.L824
Publication status	Published - 1985 Oct
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.",

author = "Naoki Kobayashi and Toshiki Makimoto",

year = "1985",

month = oct,

doi = "10.1143/JJAP.24.L824",

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