REDUCED CARBON CONTAMINATION IN OMVPE GROWN GaAs AND AlGaAs.

Naoki Kobayashi, Toshiki Makimoto

Research output: Chapter in Book/Report/Conference proceeding › Chapter

48 Citations (Scopus)

Abstract

Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used instead of trimethyl organometallic compounds.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages824-826
Number of pages3
Volume24
Edition10
Publication statusPublished - 1985 Oct
Externally publishedYes

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Metallorganic vapor phase epitaxy
Organometallics
Contamination
Carbon
Electric properties
Optical properties

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, N., & Makimoto, T. (1985). REDUCED CARBON CONTAMINATION IN OMVPE GROWN GaAs AND AlGaAs. In Japanese Journal of Applied Physics, Part 2: Letters (10 ed., Vol. 24, pp. 824-826)

REDUCED CARBON CONTAMINATION IN OMVPE GROWN GaAs AND AlGaAs. / Kobayashi, Naoki; Makimoto, Toshiki.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 24 10. ed. 1985. p. 824-826.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Kobayashi, N & Makimoto, T 1985, REDUCED CARBON CONTAMINATION IN OMVPE GROWN GaAs AND AlGaAs. in Japanese Journal of Applied Physics, Part 2: Letters. 10 edn, vol. 24, pp. 824-826.
Kobayashi N, Makimoto T. REDUCED CARBON CONTAMINATION IN OMVPE GROWN GaAs AND AlGaAs. In Japanese Journal of Applied Physics, Part 2: Letters. 10 ed. Vol. 24. 1985. p. 824-826
Kobayashi, Naoki ; Makimoto, Toshiki. / REDUCED CARBON CONTAMINATION IN OMVPE GROWN GaAs AND AlGaAs. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 24 10. ed. 1985. pp. 824-826
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