TY - JOUR
T1 - Reduced carbon contamination in OMVPE grown GaAs and AlGaAs
AU - Kobayashi, Naoki
AU - Makimoto, Toshiki
PY - 1985/10
Y1 - 1985/10
N2 - Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.
AB - Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.
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U2 - 10.1143/JJAP.24.L824
DO - 10.1143/JJAP.24.L824
M3 - Article
AN - SCOPUS:0022145411
VL - 24
SP - L824-L826
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -