Reduced damage of electron cyclotron resonance etching by In doping into p-GaN

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We investigated the effect of In atoms in p-GaN on the damage induced by electron cyclotron resonance etching. After etching the surface of p-GaN without In atoms, the I-V characteristics between two Ni/Au electrodes on the surface showed non-Ohmic behavior. This is ascribed to the damage induced by this etching process, as previously reported. The Ohmic characteristics were much improved for p-GaN doped with In atoms compared with those for p-GaN without In atoms. The Ohmic characteristics were improved as the In mole fraction in the p-(In)GaN was increased. The non-Ohmic behavior arises from the damaged layer between the Ni/Au electrode and the p-(In)GaN layer. This damaged layer is considered to become thinner as the In mole fraction is increased, resulting in improved Ohmic characteristics.

Original languageEnglish
Pages (from-to)350-355
Number of pages6
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec
Externally publishedYes

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
Etching
Doping (additives)
etching
damage
Atoms
atoms
Electrodes
electrodes

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Reduced damage of electron cyclotron resonance etching by In doping into p-GaN. / Makimoto, Toshiki; Kumakura, Kazuhide; Kobayashi, Naoki.

In: Journal of Crystal Growth, Vol. 221, No. 1-4, 12.2000, p. 350-355.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Kumakura, Kazuhide ; Kobayashi, Naoki. / Reduced damage of electron cyclotron resonance etching by In doping into p-GaN. In: Journal of Crystal Growth. 2000 ; Vol. 221, No. 1-4. pp. 350-355.
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