Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

T. Onuma, S. F. Chichibu, A. Uedono, Y. Z. Yoo, T. Chikyow, Takayuki Sota, M. Kawasaki, H. Koinuma

    Research output: Contribution to journalArticle

    32 Citations (Scopus)

    Abstract

    Nonradiative photoluminescence (PL) lifetime (τnr) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τnr of 105 ps at room temperature.

    Original languageEnglish
    Pages (from-to)5586-5588
    Number of pages3
    JournalApplied Physics Letters
    Volume85
    Issue number23
    DOIs
    Publication statusPublished - 2004 Dec 6

    Fingerprint

    molecular beam epitaxy
    buffers
    point defects
    defects
    lasers
    photoluminescence
    oxidation
    positron annihilation
    anomalies
    reflectance
    life (durability)
    room temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer. / Onuma, T.; Chichibu, S. F.; Uedono, A.; Yoo, Y. Z.; Chikyow, T.; Sota, Takayuki; Kawasaki, M.; Koinuma, H.

    In: Applied Physics Letters, Vol. 85, No. 23, 06.12.2004, p. 5586-5588.

    Research output: Contribution to journalArticle

    Onuma, T. ; Chichibu, S. F. ; Uedono, A. ; Yoo, Y. Z. ; Chikyow, T. ; Sota, Takayuki ; Kawasaki, M. ; Koinuma, H. / Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer. In: Applied Physics Letters. 2004 ; Vol. 85, No. 23. pp. 5586-5588.
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    AU - Chichibu, S. F.

    AU - Uedono, A.

    AU - Yoo, Y. Z.

    AU - Chikyow, T.

    AU - Sota, Takayuki

    AU - Kawasaki, M.

    AU - Koinuma, H.

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