Reduced reconfigurable logic circuit design based on double gate CNTFETs using ambipolar binary decision diagram

Hiroshi Ninomiya, Manabu Kobayashi, Shigeyoshi Watanabe

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This letter describes the design methodology for reduced reconfigurable logic circuits based on double gate carbon nanotube field effect transistors (DG-CNTFETs) with ambipolar propoerty. Ambipolar Binary Decision Diagram (Am-BDD) which represents the cornerstone for automatic pass transistor logic (PTL) synthesis flows of ambipolar devices was utilized to build DG-CNTFET based n-input reconfigurable cells in the conventional approach. The proposed method can reduce the number of ambipolar devices for 2-inputs reconfigurable cells, incorporating the simple Boolean algebra in the Am-BDD compared with the conventional approach. As a result, the static 2-inputs reconfigurable circuit with 16 logic functions can be synthesized by using 8 DG-CNTFETs although the previous design method needed 12 DG-CNTFETs for the same purpose.

Original languageEnglish
Pages (from-to)356-359
Number of pages4
JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
VolumeE96-A
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Fingerprint

Carbon nanotube field effect transistors
Logic Design
Binary decision diagrams
Logic design
Field-effect Transistor
Decision Diagrams
Circuit Design
Nanotubes
Carbon
Binary
Logic
Logic Synthesis
Boolean algebra
Logic circuits
Cell
Design Method
Design Methodology
Transistors
Networks (circuits)

Keywords

  • Ambipolar device
  • Binary decision diagram
  • Double gate CNTFET
  • Reconfigurable logic design

ASJC Scopus subject areas

  • Signal Processing
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

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N2 - This letter describes the design methodology for reduced reconfigurable logic circuits based on double gate carbon nanotube field effect transistors (DG-CNTFETs) with ambipolar propoerty. Ambipolar Binary Decision Diagram (Am-BDD) which represents the cornerstone for automatic pass transistor logic (PTL) synthesis flows of ambipolar devices was utilized to build DG-CNTFET based n-input reconfigurable cells in the conventional approach. The proposed method can reduce the number of ambipolar devices for 2-inputs reconfigurable cells, incorporating the simple Boolean algebra in the Am-BDD compared with the conventional approach. As a result, the static 2-inputs reconfigurable circuit with 16 logic functions can be synthesized by using 8 DG-CNTFETs although the previous design method needed 12 DG-CNTFETs for the same purpose.

AB - This letter describes the design methodology for reduced reconfigurable logic circuits based on double gate carbon nanotube field effect transistors (DG-CNTFETs) with ambipolar propoerty. Ambipolar Binary Decision Diagram (Am-BDD) which represents the cornerstone for automatic pass transistor logic (PTL) synthesis flows of ambipolar devices was utilized to build DG-CNTFET based n-input reconfigurable cells in the conventional approach. The proposed method can reduce the number of ambipolar devices for 2-inputs reconfigurable cells, incorporating the simple Boolean algebra in the Am-BDD compared with the conventional approach. As a result, the static 2-inputs reconfigurable circuit with 16 logic functions can be synthesized by using 8 DG-CNTFETs although the previous design method needed 12 DG-CNTFETs for the same purpose.

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