Abstract
Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss.
| Original language | English |
|---|---|
| Pages (from-to) | 4762-4765 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 266 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2008 Nov |
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Keywords
- Birefringence
- Ion implantation
- Planar lightwave circuit
- Polarization dependent loss
ASJC Scopus subject areas
- Instrumentation
- Nuclear and High Energy Physics
Cite this
Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence. / Yu, Seung Jun; Ohki, Yoshimichi; Fujimaki, Makoto; Awazu, Koichi; Tominaga, Junji; Sasa, Kimikazu; Komatsubara, Tetsuro.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 266, No. 21, 11.2008, p. 4762-4765.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence
AU - Yu, Seung Jun
AU - Ohki, Yoshimichi
AU - Fujimaki, Makoto
AU - Awazu, Koichi
AU - Tominaga, Junji
AU - Sasa, Kimikazu
AU - Komatsubara, Tetsuro
PY - 2008/11
Y1 - 2008/11
N2 - Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss.
AB - Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss.
KW - Birefringence
KW - Ion implantation
KW - Planar lightwave circuit
KW - Polarization dependent loss
UR - http://www.scopus.com/inward/record.url?scp=54049104288&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54049104288&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2008.07.027
DO - 10.1016/j.nimb.2008.07.027
M3 - Article
AN - SCOPUS:54049104288
VL - 266
SP - 4762
EP - 4765
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 21
ER -