Abstract
Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss.
| Original language | English |
|---|---|
| Pages (from-to) | 4762-4765 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 266 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2008 Nov 1 |
Keywords
- Birefringence
- Ion implantation
- Planar lightwave circuit
- Polarization dependent loss
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Cite this
Yu, S. J., Ohki, Y., Fujimaki, M., Awazu, K., Tominaga, J., Sasa, K., & Komatsubara, T. (2008). Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 266(21), 4762-4765. https://doi.org/10.1016/j.nimb.2008.07.027