Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions

Takeshi Hamamoto, Yoshiaki Fukuzumi, Tomoki Higashi, Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino, Takashi Ohsawa, Akihiro Nitayama

Research output: Contribution to journalArticle

Abstract

The cell-to-cell leakage caused by bipolar disturb of the floating-body cell (FBC) has been investigated. In the case of FBC without silicide at the source and drain regions, the change of data "0" to data "1" has been observed in the writing operation to the adjacent cell. However, this leakage can be reduced when the silicide is formed on the thin silicon film at the source and drain regions. It has been clarified that the diffusion of holes inside the n+ region is restricted by the capture of holes at the silicide/silicon interface when silicon thickness reduces. Based on these experimental results, 6F2 layout of FBC can be realized with the conventional logic device process platform.

Original languageEnglish
Article number5484457
Pages (from-to)1781-1788
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1
Externally publishedYes

Keywords

  • Dynamic random-access memory (DRAM) chips
  • hot carriers
  • metaloxidesemiconductor field-effect transistors (MOSFETS)
  • silicon-on-insulator technology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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