Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions

Takeshi Hamamoto, Yoshiaki Fukuzumi, Tomoki Higashi, Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino, Takashi Ohsawa, Akihiro Nitayama

Research output: Contribution to journalArticle

Abstract

The cell-to-cell leakage caused by bipolar disturb of the floating-body cell (FBC) has been investigated. In the case of FBC without silicide at the source and drain regions, the change of data "0" to data "1" has been observed in the writing operation to the adjacent cell. However, this leakage can be reduced when the silicide is formed on the thin silicon film at the source and drain regions. It has been clarified that the diffusion of holes inside the n+ region is restricted by the capture of holes at the silicide/silicon interface when silicon thickness reduces. Based on these experimental results, 6F2 layout of FBC can be realized with the conventional logic device process platform.

Original languageEnglish
Article number5484457
Pages (from-to)1781-1788
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number8
DOIs
Publication statusPublished - 2010 Aug
Externally publishedYes

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Silicon
Logic devices

Keywords

  • Dynamic random-access memory (DRAM) chips
  • hot carriers
  • metaloxidesemiconductor field-effect transistors (MOSFETS)
  • silicon-on-insulator technology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hamamoto, T., Fukuzumi, Y., Higashi, T., Nakajima, H., Minami, Y., Shino, T., ... Nitayama, A. (2010). Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions. IEEE Transactions on Electron Devices, 57(8), 1781-1788. [5484457]. https://doi.org/10.1109/TED.2010.2050550

Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions. / Hamamoto, Takeshi; Fukuzumi, Yoshiaki; Higashi, Tomoki; Nakajima, Hiroomi; Minami, Yoshihiro; Shino, Tomoaki; Ohsawa, Takashi; Nitayama, Akihiro.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 8, 5484457, 08.2010, p. 1781-1788.

Research output: Contribution to journalArticle

Hamamoto, Takeshi ; Fukuzumi, Yoshiaki ; Higashi, Tomoki ; Nakajima, Hiroomi ; Minami, Yoshihiro ; Shino, Tomoaki ; Ohsawa, Takashi ; Nitayama, Akihiro. / Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 8. pp. 1781-1788.
@article{dee69a55924c4ccdb73310208e379b0e,
title = "Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions",
abstract = "The cell-to-cell leakage caused by bipolar disturb of the floating-body cell (FBC) has been investigated. In the case of FBC without silicide at the source and drain regions, the change of data {"}0{"} to data {"}1{"} has been observed in the writing operation to the adjacent cell. However, this leakage can be reduced when the silicide is formed on the thin silicon film at the source and drain regions. It has been clarified that the diffusion of holes inside the n+ region is restricted by the capture of holes at the silicide/silicon interface when silicon thickness reduces. Based on these experimental results, 6F2 layout of FBC can be realized with the conventional logic device process platform.",
keywords = "Dynamic random-access memory (DRAM) chips, hot carriers, metaloxidesemiconductor field-effect transistors (MOSFETS), silicon-on-insulator technology",
author = "Takeshi Hamamoto and Yoshiaki Fukuzumi and Tomoki Higashi and Hiroomi Nakajima and Yoshihiro Minami and Tomoaki Shino and Takashi Ohsawa and Akihiro Nitayama",
year = "2010",
month = "8",
doi = "10.1109/TED.2010.2050550",
language = "English",
volume = "57",
pages = "1781--1788",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Reduction of bipolar disturb of floating-body cell (FBC) by silicide and thin silicon film formed at source and drain regions

AU - Hamamoto, Takeshi

AU - Fukuzumi, Yoshiaki

AU - Higashi, Tomoki

AU - Nakajima, Hiroomi

AU - Minami, Yoshihiro

AU - Shino, Tomoaki

AU - Ohsawa, Takashi

AU - Nitayama, Akihiro

PY - 2010/8

Y1 - 2010/8

N2 - The cell-to-cell leakage caused by bipolar disturb of the floating-body cell (FBC) has been investigated. In the case of FBC without silicide at the source and drain regions, the change of data "0" to data "1" has been observed in the writing operation to the adjacent cell. However, this leakage can be reduced when the silicide is formed on the thin silicon film at the source and drain regions. It has been clarified that the diffusion of holes inside the n+ region is restricted by the capture of holes at the silicide/silicon interface when silicon thickness reduces. Based on these experimental results, 6F2 layout of FBC can be realized with the conventional logic device process platform.

AB - The cell-to-cell leakage caused by bipolar disturb of the floating-body cell (FBC) has been investigated. In the case of FBC without silicide at the source and drain regions, the change of data "0" to data "1" has been observed in the writing operation to the adjacent cell. However, this leakage can be reduced when the silicide is formed on the thin silicon film at the source and drain regions. It has been clarified that the diffusion of holes inside the n+ region is restricted by the capture of holes at the silicide/silicon interface when silicon thickness reduces. Based on these experimental results, 6F2 layout of FBC can be realized with the conventional logic device process platform.

KW - Dynamic random-access memory (DRAM) chips

KW - hot carriers

KW - metaloxidesemiconductor field-effect transistors (MOSFETS)

KW - silicon-on-insulator technology

UR - http://www.scopus.com/inward/record.url?scp=77955175055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955175055&partnerID=8YFLogxK

U2 - 10.1109/TED.2010.2050550

DO - 10.1109/TED.2010.2050550

M3 - Article

VL - 57

SP - 1781

EP - 1788

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

M1 - 5484457

ER -