Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

S. F. Chichibu; T. Koida; M. D. Craven; B. A. Haskell; T. Onuma; T. Sota; J. S. Speck; S. P. DenBaars; S. Nakamura

doi:10.1002/pssc.200461423

Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

S. F. Chichibu^*, T. Koida, M. D. Craven, B. A. Haskell, T. Onuma, T. Sota, J. S. Speck, S. P. DenBaars, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) Al_xGa_1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τ_PL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τ_PL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

Original language	English
Pages (from-to)	2700-2703
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200461423
Publication status	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics

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Chichibu, S. F., Koida, T., Craven, M. D., Haskell, B. A., Onuma, T., Sota, T., Speck, J. S., DenBaars, S. P., & Nakamura, S. (2005). Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. Physica Status Solidi C: Conferences, 2(7), 2700-2703. https://doi.org/10.1002/pssc.200461423

Chichibu, SF, Koida, T, Craven, MD, Haskell, BA, Onuma, T, Sota, T, Speck, JS, DenBaars, SP & Nakamura, S 2005, 'Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique', Physica Status Solidi C: Conferences, vol. 2, no. 7, pp. 2700-2703. https://doi.org/10.1002/pssc.200461423

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title = "Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique",

abstract = "Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.",

author = "Chichibu, {S. F.} and T. Koida and Craven, {M. D.} and Haskell, {B. A.} and T. Onuma and T. Sota and Speck, {J. S.} and DenBaars, {S. P.} and S. Nakamura",

year = "2005",

doi = "10.1002/pssc.200461423",

language = "English",

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pages = "2700--2703",

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T1 - Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

AU - Chichibu, S. F.

AU - Koida, T.

AU - Craven, M. D.

AU - Haskell, B. A.

AU - Onuma, T.

AU - Sota, T.

AU - Speck, J. S.

AU - DenBaars, S. P.

AU - Nakamura, S.

PY - 2005

Y1 - 2005

N2 - Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

AB - Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

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Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

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