Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

S. F. Chichibu, T. Koida, M. D. Craven, B. A. Haskell, T. Onuma, Takayuki Sota, J. S. Speck, S. P. DenBaars, S. Nakamura

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) Al xGa 1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τ PL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τ PL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

    Original languageEnglish
    Title of host publicationPhysica Status Solidi C: Conferences
    Pages2700-2703
    Number of pages4
    Volume2
    Edition7
    DOIs
    Publication statusPublished - 2005

    Fingerprint

    quantum wells
    photoluminescence
    defects
    low Earth orbits
    polarization
    Stark effect
    vapor phase epitaxy
    halides
    quantum efficiency
    templates
    life (durability)
    shift
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Chichibu, S. F., Koida, T., Craven, M. D., Haskell, B. A., Onuma, T., Sota, T., ... Nakamura, S. (2005). Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2700-2703) https://doi.org/10.1002/pssc.200461423

    Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. / Chichibu, S. F.; Koida, T.; Craven, M. D.; Haskell, B. A.; Onuma, T.; Sota, Takayuki; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. p. 2700-2703.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Chichibu, SF, Koida, T, Craven, MD, Haskell, BA, Onuma, T, Sota, T, Speck, JS, DenBaars, SP & Nakamura, S 2005, Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. in Physica Status Solidi C: Conferences. 7 edn, vol. 2, pp. 2700-2703. https://doi.org/10.1002/pssc.200461423
    Chichibu SF, Koida T, Craven MD, Haskell BA, Onuma T, Sota T et al. Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. In Physica Status Solidi C: Conferences. 7 ed. Vol. 2. 2005. p. 2700-2703 https://doi.org/10.1002/pssc.200461423
    Chichibu, S. F. ; Koida, T. ; Craven, M. D. ; Haskell, B. A. ; Onuma, T. ; Sota, Takayuki ; Speck, J. S. ; DenBaars, S. P. ; Nakamura, S. / Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. pp. 2700-2703
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    abstract = "Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) Al xGa 1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τ PL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τ PL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.",
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    AU - Koida, T.

    AU - Craven, M. D.

    AU - Haskell, B. A.

    AU - Onuma, T.

    AU - Sota, Takayuki

    AU - Speck, J. S.

    AU - DenBaars, S. P.

    AU - Nakamura, S.

    PY - 2005

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    AB - Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) Al xGa 1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τ PL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τ PL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

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