Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed photonic crystal (PhC) lasers, in which extremely short active regions (420 nm∼1260 nm) are embedded with an InP PhC slab. 4-μΛ threshold currents and 1-fJ/bit operating energies were achieved with 840-nm-long and 1260-nm-long active regions consisting of 3 and 2 QWs, respectively.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-104
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 2018 Oct 30
Externally publishedYes
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 2018 Sep 162018 Sep 19

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period18/9/1618/9/19

Fingerprint

Photonic crystals
photonics
cavities
Lasers
threshold currents
crystals
lasers
slabs
energy

Keywords

  • buried heterostructure
  • lateral current injection
  • photonic crystal laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Takeda, K., Fujii, T., Kuramochi, E., Shinya, A., Notomi, M., Kakitsuka, T., & Matsuo, S. (2018). Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 103-104). [8516187] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516187

Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. / Takeda, Koji; Fujii, Takuro; Kuramochi, Eiichi; Shinya, Akihiko; Notomi, Masaya; Kakitsuka, Takaaki; Matsuo, Shinji.

26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 103-104 8516187 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takeda, K, Fujii, T, Kuramochi, E, Shinya, A, Notomi, M, Kakitsuka, T & Matsuo, S 2018, Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516187, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 103-104, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516187
Takeda K, Fujii T, Kuramochi E, Shinya A, Notomi M, Kakitsuka T et al. Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 103-104. 8516187. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2018.8516187
Takeda, Koji ; Fujii, Takuro ; Kuramochi, Eiichi ; Shinya, Akihiko ; Notomi, Masaya ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 103-104 (Conference Digest - IEEE International Semiconductor Laser Conference).
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