Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed photonic crystal (PhC) lasers, in which extremely short active regions (420 nm∼1260 nm) are embedded with an InP PhC slab. 4-μΛ threshold currents and 1-fJ/bit operating energies were achieved with 840-nm-long and 1260-nm-long active regions consisting of 3 and 2 QWs, respectively.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-104
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 2018 Oct 30
Externally publishedYes
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 2018 Sep 162018 Sep 19

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period18/9/1618/9/19

Keywords

  • buried heterostructure
  • lateral current injection
  • photonic crystal laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Takeda, K., Fujii, T., Kuramochi, E., Shinya, A., Notomi, M., Kakitsuka, T., & Matsuo, S. (2018). Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 103-104). [8516187] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516187