Reduction of contact resistivity by As redistribution during Pd 2Si formation

I. Ohdomari; M. Hori; T. Maeda; A. Ogura; H. Kawarada; T. Hamamoto; K. Sano; K. N. Tu; M. Wittmer; I. Kimura; K. Yoneda

doi:10.1063/1.332630

Reduction of contact resistivity by As redistribution during Pd ₂Si formation

I. Ohdomari^*, M. Hori, T. Maeda, A. Ogura, H. Kawarada, T. Hamamoto, K. Sano, K. N. Tu, M. Wittmer, I. Kimura, K. Yoneda

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have investigated the redistribution of uniformly doped As atoms (N _D=4.0×10¹⁹ cm^-3) in Si during Pd₂Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd₂Si formation at 250°C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×10²⁰ cm^- ³. Contact resistivity is reduced from the initial values of 3.8×10^-5-4.1×10^-4 Ω cm² before silicide formation, to a final value of 1.8×10^-6 Ω cm² after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.

Original language	English
Pages (from-to)	4679-4682
Number of pages	4
Journal	Journal of Applied Physics
Volume	54
Issue number	8
DOIs	https://doi.org/10.1063/1.332630
Publication status	Published - 1983

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.332630

Cite this

@article{7243902386d24b03831880a37bfb7e16,

title = "Reduction of contact resistivity by As redistribution during Pd 2Si formation",

abstract = "We have investigated the redistribution of uniformly doped As atoms (N D=4.0×1019 cm-3) in Si during Pd2Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd2Si formation at 250°C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×1020 cm- 3. Contact resistivity is reduced from the initial values of 3.8×10-5-4.1×10-4 Ω cm2 before silicide formation, to a final value of 1.8×10-6 Ω cm2 after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.",

author = "I. Ohdomari and M. Hori and T. Maeda and A. Ogura and H. Kawarada and T. Hamamoto and K. Sano and Tu, {K. N.} and M. Wittmer and I. Kimura and K. Yoneda",

year = "1983",

doi = "10.1063/1.332630",

language = "English",

volume = "54",

pages = "4679--4682",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Reduction of contact resistivity by As redistribution during Pd 2Si formation

AU - Ohdomari, I.

AU - Hori, M.

AU - Maeda, T.

AU - Ogura, A.

AU - Kawarada, H.

AU - Hamamoto, T.

AU - Sano, K.

AU - Tu, K. N.

AU - Wittmer, M.

AU - Kimura, I.

AU - Yoneda, K.

PY - 1983

Y1 - 1983

N2 - We have investigated the redistribution of uniformly doped As atoms (N D=4.0×1019 cm-3) in Si during Pd2Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd2Si formation at 250°C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×1020 cm- 3. Contact resistivity is reduced from the initial values of 3.8×10-5-4.1×10-4 Ω cm2 before silicide formation, to a final value of 1.8×10-6 Ω cm2 after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.

AB - We have investigated the redistribution of uniformly doped As atoms (N D=4.0×1019 cm-3) in Si during Pd2Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd2Si formation at 250°C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×1020 cm- 3. Contact resistivity is reduced from the initial values of 3.8×10-5-4.1×10-4 Ω cm2 before silicide formation, to a final value of 1.8×10-6 Ω cm2 after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.

UR - http://www.scopus.com/inward/record.url?scp=0020799562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020799562&partnerID=8YFLogxK

U2 - 10.1063/1.332630

DO - 10.1063/1.332630

M3 - Article

AN - SCOPUS:0020799562

SN - 0021-8979

VL - 54

SP - 4679

EP - 4682

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Reduction of contact resistivity by As redistribution during Pd ₂Si formation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this