### Abstract

The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50% of the total redistributed.

Original language | English |
---|---|

Pages (from-to) | 4679-4682 |

Number of pages | 4 |

Journal | Journal of Applied Physics |

Volume | 54 |

Issue number | 8 |

DOIs | |

Publication status | Published - 1983 Aug |

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### ASJC Scopus subject areas

- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)

### Cite this

*Journal of Applied Physics*,

*54*(8), 4679-4682. https://doi.org/10.1063/1.332630

**REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION.** / Ohdomari, I.; Hori, M.; Maeda, T.; Ogura, A.; Kawarada, Hiroshi; Hamamoto, T.; Sano, K.; Tu, K. N.; Wittmer, M.; Kimura, I.; Yoneda, K.

Research output: Contribution to journal › Article

*Journal of Applied Physics*, vol. 54, no. 8, pp. 4679-4682. https://doi.org/10.1063/1.332630

}

TY - JOUR

T1 - REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION.

AU - Ohdomari, I.

AU - Hori, M.

AU - Maeda, T.

AU - Ogura, A.

AU - Kawarada, Hiroshi

AU - Hamamoto, T.

AU - Sano, K.

AU - Tu, K. N.

AU - Wittmer, M.

AU - Kimura, I.

AU - Yoneda, K.

PY - 1983/8

Y1 - 1983/8

N2 - The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50% of the total redistributed.

AB - The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50% of the total redistributed.

UR - http://www.scopus.com/inward/record.url?scp=0020799562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020799562&partnerID=8YFLogxK

U2 - 10.1063/1.332630

DO - 10.1063/1.332630

M3 - Article

AN - SCOPUS:0020799562

VL - 54

SP - 4679

EP - 4682

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -