REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION.

I. Ohdomari, M. Hori, T. Maeda, A. Ogura, Hiroshi Kawarada, T. Hamamoto, K. Sano, K. N. Tu, M. Wittmer, I. Kimura, K. Yoneda

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50% of the total redistributed.

    Original languageEnglish
    Pages (from-to)4679-4682
    Number of pages4
    JournalJournal of Applied Physics
    Volume54
    Issue number8
    DOIs
    Publication statusPublished - 1983 Aug

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    electric contacts
    electrical resistivity
    atoms
    neutron activation analysis
    silicon

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Ohdomari, I., Hori, M., Maeda, T., Ogura, A., Kawarada, H., Hamamoto, T., ... Yoneda, K. (1983). REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION. Journal of Applied Physics, 54(8), 4679-4682. https://doi.org/10.1063/1.332630

    REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION. / Ohdomari, I.; Hori, M.; Maeda, T.; Ogura, A.; Kawarada, Hiroshi; Hamamoto, T.; Sano, K.; Tu, K. N.; Wittmer, M.; Kimura, I.; Yoneda, K.

    In: Journal of Applied Physics, Vol. 54, No. 8, 08.1983, p. 4679-4682.

    Research output: Contribution to journalArticle

    Ohdomari, I, Hori, M, Maeda, T, Ogura, A, Kawarada, H, Hamamoto, T, Sano, K, Tu, KN, Wittmer, M, Kimura, I & Yoneda, K 1983, 'REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION.', Journal of Applied Physics, vol. 54, no. 8, pp. 4679-4682. https://doi.org/10.1063/1.332630
    Ohdomari, I. ; Hori, M. ; Maeda, T. ; Ogura, A. ; Kawarada, Hiroshi ; Hamamoto, T. ; Sano, K. ; Tu, K. N. ; Wittmer, M. ; Kimura, I. ; Yoneda, K. / REDUCTION OF CONTACT RESISTIVITY BY As REDISTRIBUTION DURING Pd//2Si FORMATION. In: Journal of Applied Physics. 1983 ; Vol. 54, No. 8. pp. 4679-4682.
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    abstract = "The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50{\%} of the total redistributed.",
    author = "I. Ohdomari and M. Hori and T. Maeda and A. Ogura and Hiroshi Kawarada and T. Hamamoto and K. Sano and Tu, {K. N.} and M. Wittmer and I. Kimura and K. Yoneda",
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    AU - Ohdomari, I.

    AU - Hori, M.

    AU - Maeda, T.

    AU - Ogura, A.

    AU - Kawarada, Hiroshi

    AU - Hamamoto, T.

    AU - Sano, K.

    AU - Tu, K. N.

    AU - Wittmer, M.

    AU - Kimura, I.

    AU - Yoneda, K.

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    N2 - The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50% of the total redistributed.

    AB - The redistribution of uniformly doped as atoms (N//D equals 4. 0 multiplied by 10**1**9 cm** minus **3) in Si during Pd//2Si formation has been investigated with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd//2Si formation at 250 degree C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2. 0 multiplied by 10**2**0 cm** minus **3. Contact resistivity is reduced from the initial values of 3. 8 multiplied by 10** minus **5 - 4. 1 multiplied by 10** minus **4 OMEGA cm**2 before silicide formation, to a final value of 1. 8 multiplied by 10** minus **6 OMEGA cm**2 after complete reaction. The electrically active As atoms are estimated to be 50% of the total redistributed.

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