Reduction of deep level concentrations in GaAs layers grown by flow-rate modulation epitaxy

Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In a modified metalorganic chemical vapor deposition, flow-rate modulation epitaxy, the growth rate of GaAs can be higher than one monolayer per cycle (0.28 nm/cycle). Ga-atoms, the number of which is up to 3 times as high as the surface site number, and arsenic are alternately supplied on the (001) GaAs substrates to grow GaAs layers. There is no surface degradation of the epitaxial layers even at a growth rate of three monolayers per cycle. In this method after Ga-atomic layers are formed, As atoms diffuse into the Ga-atomic layers to form a GaAs single crystal. In GaAs layers grown under such conditions, the concentration of the midgap level, “EL2, ” is much reduced. Furthermore, photoluminescence measurement indicates that high-quality GaAs layers are grown.

Original languageEnglish
Pages (from-to)L152-L154
JournalJapanese journal of applied physics
Volume27
Issue number2A
DOIs
Publication statusPublished - 1988 Feb

Keywords

  • Deep level concentrations
  • EL2
  • Flow-rate modulation epitaxy
  • Ga-enriched conditions
  • N-GaAs
  • Photoluminescence

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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