REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY.

Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

In a modified metalorganic chemical vapor deposition, flow-rate modulation epitaxy, the growth rate of GaAs can be higher than one monolayer per cycle (0. 28 nm/cycle). Ga-atoms, the number of which is up to 3 times as high as the surface site number, and arsenic are alternately supplied on the (001) GaAs substrates to grow GaAs layers. There is no surface degradation of the epitaxial layers even at a growth rate of three monolayers per cycle. In this method after Ga-atomic layers are formed, As atoms diffuse into the Ga-atomic layers to form a GaAs single crystal. In GaAs layers grown under such conditions, the concentration of the midgap level, 'EL2,' is much reduced. Furthermore, photoluminescence measurement indicates that high-quality GaAs layers are grown.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages152-154
Number of pages3
Volume27
Edition2
Publication statusPublished - 1988 Feb
Externally publishedYes

Fingerprint

Epitaxial growth
Monolayers
Flow rate
Modulation
Atoms
Epitaxial layers
Metallorganic chemical vapor deposition
Arsenic
Photoluminescence
Single crystals
Degradation
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., Yamauchi, Y., & Horikoshi, Y. (1988). REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters (2 ed., Vol. 27, pp. 152-154)

REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY. / Makimoto, Toshiki; Yamauchi, Yoshiharu; Horikoshi, Yoshiji.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 27 2. ed. 1988. p. 152-154.

Research output: Chapter in Book/Report/Conference proceedingChapter

Makimoto, T, Yamauchi, Y & Horikoshi, Y 1988, REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY. in Japanese Journal of Applied Physics, Part 2: Letters. 2 edn, vol. 27, pp. 152-154.
Makimoto T, Yamauchi Y, Horikoshi Y. REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters. 2 ed. Vol. 27. 1988. p. 152-154
Makimoto, Toshiki ; Yamauchi, Yoshiharu ; Horikoshi, Yoshiji. / REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 27 2. ed. 1988. pp. 152-154
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