Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer

T. Yoshida, T. Nagatake, M. Kobayashi, A. Yoshikawa

Research output: Contribution to journalArticle

Abstract

The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

Original languageEnglish
Pages (from-to)750-753
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
Publication statusPublished - 1996 Feb

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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