Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer

T. Yoshida, T. Nagatake, Masakazu Kobayashi, A. Yoshikawa

Research output: Contribution to journalArticle

Abstract

The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

Original languageEnglish
Pages (from-to)750-753
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Valence bands
discontinuity
valence
Capacitance measurement
Defect structures
Voltage measurement
zincblende
electrical measurement
plots
capacitance
Electric potential
defects
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer. / Yoshida, T.; Nagatake, T.; Kobayashi, Masakazu; Yoshikawa, A.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 750-753.

Research output: Contribution to journalArticle

Yoshida, T, Nagatake, T, Kobayashi, M & Yoshikawa, A 1996, 'Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer', Journal of Crystal Growth, vol. 159, no. 1-4, pp. 750-753.
Yoshida, T. ; Nagatake, T. ; Kobayashi, Masakazu ; Yoshikawa, A. / Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 750-753.
@article{e545dd7f29a24c5cbddf951ba713f639,
title = "Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer",
abstract = "The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 {\AA}. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 {\AA}. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.",
author = "T. Yoshida and T. Nagatake and Masakazu Kobayashi and A. Yoshikawa",
year = "1996",
month = "2",
language = "English",
volume = "159",
pages = "750--753",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer

AU - Yoshida, T.

AU - Nagatake, T.

AU - Kobayashi, Masakazu

AU - Yoshikawa, A.

PY - 1996/2

Y1 - 1996/2

N2 - The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

AB - The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

UR - http://www.scopus.com/inward/record.url?scp=0030562256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030562256&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030562256

VL - 159

SP - 750

EP - 753

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -