Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer

T. Yoshida; T. Nagatake; M. Kobayashi; A. Yoshikawa

doi:10.1016/0022-0248(95)00789-X

Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga₂Se₃ interfacial layer

T. Yoshida^*, T. Nagatake, M. Kobayashi, A. Yoshikawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The defect zincblende structure Ga₂Se₃ was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔE_v) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔE_v depended on the thickness of the Ga₂Se₃ interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga₂Se₃/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga₂Se₃ interfacial layer.

Original language	English
Pages (from-to)	750-753
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00789-X
Publication status	Published - 1996 Feb
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00789-X

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@article{e545dd7f29a24c5cbddf951ba713f639,

title = "Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer",

abstract = "The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 {\AA}. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 {\AA}. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.",

author = "T. Yoshida and T. Nagatake and M. Kobayashi and A. Yoshikawa",

note = "Funding Information: This work was partly supported by the Hoso-Bunka Foundation, and also by the Grant-in-Aid from the Ministry of Education, Science and Culture, Japan. The authors wish to express their gratitude to New Japan Radio Co., Ltd. for the support of this work.",

year = "1996",

month = feb,

doi = "10.1016/0022-0248(95)00789-X",

language = "English",

volume = "159",

pages = "750--753",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer

AU - Yoshida, T.

AU - Nagatake, T.

AU - Kobayashi, M.

AU - Yoshikawa, A.

N1 - Funding Information: This work was partly supported by the Hoso-Bunka Foundation, and also by the Grant-in-Aid from the Ministry of Education, Science and Culture, Japan. The authors wish to express their gratitude to New Japan Radio Co., Ltd. for the support of this work.

PY - 1996/2

Y1 - 1996/2

N2 - The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

AB - The defect zincblende structure Ga2Se3 was inserted at the interface of ZnSe and ZnTe so that the valence band discontinuity (ΔEv) could be modified. The valence band discontinuity was determined from the capacitance-voltage (C-V) measurement technique. The measured ΔEv depended on the thickness of the Ga2Se3 interfacial layer. The discontinuity became negligible when the thickness of the interfacial layer was about 4 Å. The current-voltage (I-V) characteristics for the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly linear plot when the thickness of the interfacial layer was about 8 Å. These results suggest that the valence band discontinuity between ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.

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U2 - 10.1016/0022-0248(95)00789-X

DO - 10.1016/0022-0248(95)00789-X

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SN - 0022-0248

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SP - 750

EP - 753

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga₂Se₃ interfacial layer

Abstract

ASJC Scopus subject areas

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